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Atomic nanolithography patterning of submicron features: writing an organic self-assembled monolayer with cold, bright Cs atom beams

机译：亚微米级特征的原子纳米光刻图案：用冷的，明亮的Cs原子束书写有机自组装单层

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摘要

Cs atom beams, transversely collimated and cooled, passing through material masks in the form of arrays of reactive-ion-etched hollow Si pyramidal tips and optical masks formed by intense standing light waves, write submicron features on self-assembled monolayers (SAMs). Features with widths as narrow as 43 ± 6 nm and spatial resolution limited only by the grain boundaries of the substrate have been realized in SAMs of alkanethiols. The material masks write two-dimensional arrays of submicron holes; the optical masks result in parallel lines spaced by half the optical wavelength. Both types of feature are written to the substrate by exposure of the masked SAM to the Cs flux and a subsequent wet chemical etch. For the arrays of pyramidal tips, acting as passive shadow masks, the resolution and size of the resultant feature depends on the distance of the mask array from the SAM, an effect caused by the residual divergence of the Cs atom beam. The standing wave optical mask acts as an array of microlenses focusing the atom flux onto the substrate. Atom 'pencils' writing on SAMs have the potential to create arbitrary submicron figures in massively parallel arrays. The smallest features and highest resolutions were realized with SAMs grown on smooth, sputtered gold substrates.
机译：横向准直并冷却的Cs原子束穿过以反应离子刻蚀的空心Si锥形尖端阵列和由强烈的站立光波形成的光学掩模形式的材料掩模，在自组装单分子膜（SAMs）上书写亚微米特征。在链烷硫醇的SAM中已经实现了宽度窄至43±6 nm且空间分辨率仅受基材晶界限制的功能。所述材料掩模写有亚微米孔的二维阵列。光学掩模产生的平行线间隔为光学波长的一半。通过将掩膜的SAM暴露于Cs助焊剂并随后进行湿法化学蚀刻，将两种类型的特征均写入基板。对于用作无源荫罩的锥形尖端阵列，所得特征的分辨率和大小取决于荫罩阵列与SAM的距离，这是由Cs原子束的残留发散引起的。驻波光学掩模充当微透镜阵列，将原子通量聚焦在基板上。在SAM上编写的Atom“铅笔”有可能在大规模并行阵列中创建任意亚微米图形。通过在光滑的溅射金基底上生长的SAM实现了最小的功能和最高的分辨率。

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