• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Structural, interfacial and optical characterization of ultrathin zirconia film grown by in situ thermal oxidation of sputtered metallic Zr films
【24h】

Structural, interfacial and optical characterization of ultrathin zirconia film grown by in situ thermal oxidation of sputtered metallic Zr films

机译：通过溅射金属Zr薄膜的原位热氧化生长的超薄氧化锆薄膜的结构，界面和光学特性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

High dielectric constant ZrO_2 gate dielectric thin films have been prepared by means of in situ thermal oxidation of sputtered metallic Zr films. XRD reveals that the as-oxidized samples are amorphous, but can be made polycrystalline with a highly (lll)-preferential orientation by increasing the annealing temperature. AFM measurements confirm that high temperature annealing results in increase of the roughness root mean square value of the films. The growth and properties of the interfacial SiO_2 layer formed at the ZrO_2/Si interface are observed by using Fourier transform infrared spectroscopy. It has been found that the formation of the interfacial layer depends on the post-deposition annealing temperature. On the basis of a parametrized Tauc-Lorentz dispersion model, the optical properties of the as-oxidized and annealed films related to the annealing temperature are systematically investigated by spectroscopic ellipsometry. The increase in the refractive index and decrease in extinction coefficient with increase of the annealing temperature are discussed in detail.
机译：已经通过溅射金属Zr膜的原位热氧化制备了高介电常数的ZrO_2栅介质薄膜。 XRD揭示了被氧化的样品是无定形的，但是可以通过提高退火温度而制成具有高（III）优先取向的多晶。 AFM测量证实高温退火导致膜的粗糙度均方根值增加。通过傅里叶变换红外光谱观察了在ZrO_2 / Si界面处形成的SiO_2界面的生长和性能。已经发现界面层的形成取决于沉积后退火温度。在参数化Tauc-Lorentz色散模型的基础上，通过椭圆偏振光谱系统研究了与退火温度相关的氧化态和退火态薄膜的光学性能。随着退火温度的升高，折射率的增加和消光系数的降低将被详细讨论。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号