Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces

M Saif Islam; S Sharma; T I Kamins

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Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces

机译：在两个垂直硅表面之间形成超高密度硅纳米桥

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We report simultaneous lateral growth of a high density of highly oriented, metal-catalyzed silicon nanowires on a patterned silicon substrate and bridging of nanowires between two vertical silicon sidewalls, which can be developed into electrodes of an electronic device. After angled deposition of catalytic metal nanoparticles on one of two opposing vertical silicon surfaces, we used a metal-catalyzed chemical vapour deposition process to grow nanowires and eventually form mechanically robust 'nanobridges'. The growth and bridging of these nanowire arrays can be integrated with existing silicon processes. This method of connecting multiple nanowires between two electrodes offers the high surface-to-volume ratio needed for nanosensor applications.

机译：我们报告在图案化的硅基板上高密度，高度定向的，金属催化的硅纳米线的同时横向生长以及两个垂直硅侧壁之间的纳米线桥接，可以将其发展为电子设备的电极。在两个相对的垂直硅表面之一上成角度沉积催化金属纳米颗粒后，我们使用了一种金属催化化学气相沉积工艺来生长纳米线，并最终形成机械坚固的“纳米桥”。这些纳米线阵列的生长和桥接可以与现有的硅工艺集成在一起。这种在两个电极之间连接多条纳米线的方法提供了纳米传感器应用所需的高表面积体积比。

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《Nanotechnology》 |2004年第5期|共4页
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M Saif Islam; S Sharma; T I Kamins;
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1. Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces [J] . M Saif Islam, S Sharma, T I Kamins Nanotechnology . 2004,第5期

机译：在两个垂直硅表面之间形成超高密度硅纳米桥
2. Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs [J] . Kuroda R., Suwa T., Teramoto A., IEEE Transactions on Electron Devices . 2009,第2期

机译：用于（100）表面定向大直径晶圆的原子平坦硅表面和硅/绝缘体界面形成技术，引入了高性能和低噪声的金属-绝缘体-硅FET
3. Stable hierarchical superhydrophobic surfaces based on vertically aligned carbon nanotube forests modified with conformal silicone coating [J] . Dong-Wook Jeong, Ung-Hui Shin, Ji Hoon Kim Carbon: An International Journal Sponsored by the American Carbon Society . 2014,第Null期

机译：基于垂直排列的碳纳米管森林的共形有机硅涂层改性的稳定分层超疏水表面
4. Development of a Vertical-spindle Rotary Surface Grinding Machine for Large Scale Silicon-wafers - Machine Specifications and Performance of Rotary Work Table [C] . A.Yui, A.Honda, S.Okuyama, International conference of the European Society for Precision Engineering and Nanotechnology . 2013

机译：大型硅片立轴旋转式平面磨床的研制-机器规格和旋转工作台性能
5. Enhanced boiling heat transfer from microconfigured silicon surfaces and entrainment flow adjacent to an isothermal vertical surface. [D] . Wright, Neil Thomas. 1992

机译：来自微结构硅表面的增强沸腾传热和与等温垂直表面相邻的夹带流。
6. Black-Silicon on Micropillars with Minimal Surface Area Enlargement to Enhance the Performance of Silicon Solar Cells [O] . Jiann Shieh, Chengyun You, Chiachen Chiu, 2016

机译：微柱上的黑硅具有最小的表面积增大以增强硅太阳能电池的性能
7. Mechanism of Surface Formation for Two-dimensional Ultrasonic Vibration Assisted Grinding of Monocrystal Silicon with Vertical Workpiece Vibration [O] . 梁志强, 王西彬, 吴勇波, 2010

机译：垂直振动的单晶硅二维超声振动辅助磨削的表面形成机理
8. Rapid Silicon Dioxide Film Formation on Clean Silicon Surfaces [R] . Kruger, J., Danko, G. A. 1992

机译：在清洁硅表面上形成快速二氧化硅薄膜

Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces

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