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Infrared detection from GaInAs/InP nanopillar arrays

机译：GaInAs / InP纳米柱阵列的红外检测

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摘要

We report on the photoresponse from large arrays of 40 nm radius nanopillars with sensitivity in the long-wavelength infrared regime. Using photoluminescence techniques, a peak wavelength blue shift of approximately 5 meV was observed at 30 K from GaInAs/InP nanopillar structures, indicating carrier confinement effects. Responsivity measurements at 30 K indicated peak wavelength response at about 8 mu m with responsivity of 420 mA W~(-1) at -2 V bias. We have also measured the noise and estimated the peak detectivity to be 3 x 108 cm Hz1/2 W~(-1) at 1 V reverse bias and 30 K. A maximum internal quantum efficiency of 4.5 percent was derived from experiment. Both the photo and the dark transport have been successfully modelled as processes that involve direct and indirect field-assisted tunnelling as well as thermionic emission. The best agreement with experiment was obtained when allowances were made for the non-uniformity of barrier widths and electric field heating of earners above the lattice temperature.
机译：我们报告了在长波长红外条件下具有敏感度的大型阵列的半径为40 nm的纳米柱的光响应。使用光致发光技术，在30 K处从GaInAs / InP纳米柱结构观察到约5 meV的峰值波长蓝移，表明载流子限制效应。在30 K下的响应度测量表明在-2 V偏压下，峰值波长响应在约8μm处具有420 mA W〜（-1）的响应。我们还测量了噪声，并估计在1 V反向偏置和30 K下的峰值检测率为3 x 108 cm Hz1 / 2 W〜（-1）。从实验得出的最大内部量子效率为4.5％。光和暗传输都已成功地建模为涉及直接和间接场辅助隧穿以及热电子发射的过程。当对栅宽度的不均匀性和在晶格温度以上的载体的电场加热进行补偿时，可以获得与实验的最佳一致性。

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