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Local modification of GaAs nanowires induced by laser heating

机译:激光加热引起的GaAs纳米线的局部修饰

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摘要

GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were performed on the same single GaAs nanowires in order to correlate their structural and optical properties. We show that the local changes of the nanowires act as a barrier for thermal transport which is of interest for thermoelectric applications.
机译:GaAs纳米线在环境空气条件下被聚焦的激光束局部加热,从而导致氧化并在纳米线表面形成晶体砷。为了使它们的结构和光学特性相互关联,对同一条GaAs纳米线进行了原子力显微镜,光致发光和拉曼光谱实验。我们表明,纳米线的局部变化充当热传输的屏障,这是热电应用的关注点。

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