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The effect of implantation dose on the microstructure of silicon nanocrystals in SiO_2

机译：注入剂量对SiO_2中硅纳米晶体微观结构的影响

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摘要

Si nanocrystals were formed by the implantation of Si~+ into a SiO_2 film, deposited on (100) Si, followed by high-temperature annealing. Transmission electron microscopy (TEM) was used to examine the effect of implantation dose on the microstructure of the Si nanocrystals (Si nc) in the SiO_2 film. The size and spatial distribution and concentration of the Si nc in four passivated samples with different implantation doses were investigated using the dark-field imaging technique. The thickness of all the samples was determined by electron energy-loss spectroscopy (EELS). The structure of the Si nc in all the samples was determined using selected area electron diffraction. It was found that the average diameter of the Si nc changes from 2.7 to 3 and to 3,3 nm for the samples with implantation doses of 6 x 10~(16), 8 x 10~(16) and 1 x 10~(17) cm~(-2); however, it ranges from 2 to 22 nm in the sample with an implantation dose of 3 x 10~(17) cm~(-2). The size of the Si nc is comparatively homogeneous throughout the whole implanted layer in the samples with implantation doses of 6 x 10~(16) and 8 x 10~(16) cm~(-2), while in the samples with implantation doses of 1 x 10~(17) and 3 x 10~(17) cm~(-2), the Si nc in the middle region of the implanted layer are bigger than those near the surface or the bottom of the layer. From TEM experimental results, the concentration of the Si nc is estimated to be 6 x 10~(18),4 x 10~(18) and 4 x 10~(18) cm~(-3) for the samples with implantation doses of 6 x 10~(16), 8 x 10~(16) and 1 x 10~(17) cm~(-2), respectively. For the sample with an implantation dose of 3 x 10~(17) cm~(-2), the concentration for the Si nc of 3 nm is around 5 x 10~(18) cm~(-3); the concentration for Si nc of 6 nm is around 2 x 10~(18) cm~(-3); and the concentration for the 12 nm group is about 1 x 10~(18) cm~(-3). In addition, the concentration determined from TEM experiments is compared with the calculated one. Combining the TEM results with a Monte Carlo simulation, we also discuss the sputtering effect and the depth distribution of the Si ions implanted in SiO_2.
机译：通过将Si〜+注入SiO_2膜，沉积在（100）Si上，然后进行高温退火来形成Si纳米晶体。用透射电子显微镜（TEM）研究了注入剂量对SiO_2薄膜中Si纳米晶体（Sinc）微观结构的影响。使用暗场成像技术研究了四种注入剂量不同的钝化样品中Si nc的大小，空间分布和浓度。所有样品的厚度通过电子能量损失谱法（EELS）确定。使用选定的区域电子衍射确定所有样品中的Si nc的结构。发现注入剂量为6 x 10〜（16），8 x 10〜（16）和1 x 10〜（）的样品的Si nc的平均直径从2.7变为3到3.3 nm。 17）厘米〜（-2）;然而，样品的注入剂量为3 x 10〜（17）cm〜（-2），范围为2至22 nm。在注入剂量为6 x 10〜（16）和8 x 10〜（16）cm〜（-2）的样品中，Si nc的尺寸在整个注入层中相对均一，而在注入剂量的样品中在1 x 10〜（17）和3 x 10〜（17）cm〜（-2）的情况下，注入层中间区域的Si nc大于注入层表面或底部附近的Si nc。根据TEM实验结果，对于植入剂量的样品，Si nc的浓度估计为6 x 10〜（18），4 x 10〜（18）和4 x 10〜（18）cm〜（-3）。分别为6 x 10〜（16），8 x 10〜（16）和1 x 10〜（17）cm〜（-2）。对于注入剂量为3 x 10〜（17）cm〜（-2）的样品，Si nc的浓度为3 nm，约为5 x 10〜（18）cm〜（-3）。 Si nc的浓度为6 nm约为2 x 10〜（18）cm〜（-3）; 12 nm组的浓度约为1 x 10〜（18）cm〜（-3）。此外，将通过TEM实验确定的浓度与计算得出的浓度进行比较。结合TEM结果和蒙特卡罗模拟，我们还讨论了溅射效应和注入到SiO_2中的Si离子的深度分布。

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