Raman study of self-assembled SiGe nanoislands grown at low temperatures

M Ya Valakh; V O Yukhymchuk; V M Dzhagan

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Raman study of self-assembled SiGe nanoislands grown at low temperatures

机译：在低温下生长的自组装SiGe纳米岛的拉曼研究

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We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 deg C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell.

机译：我们报告了在低温下通过Si（001）上的分子束外延生长的Si盖的Ge量子结构上的拉曼散射测量。我们发现，在衬底温度介于300-500摄氏度之间的情况下生长的纳米岛的Ge-Ge频率范围内存在双带结构。通过对退火样品进行拉曼散射实验已获得了补充信息。根据考虑了由应变Ge核和更弛豫的SiGe壳组成的量子结构（小屋簇）的模型来解释结果。

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《Nanotechnology》 |2005年第9期|共5页
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M Ya Valakh; V O Yukhymchuk; V M Dzhagan;
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1. Raman study of self-assembled SiGe nanoislands grown at low temperatures [J] . M Ya Valakh, V O Yukhymchuk, V M Dzhagan Nanotechnology . 2005,第9期

机译：在低温下生长的自组装SiGe纳米岛的拉曼研究
2. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si _(1-x)Ge _x buffer layers [J] . Strelchuk V.V., Nikolenko A.S., Lytvyn P.M., Semiconductors . 2012,第5期

机译：自组装SiGe纳米岛在应变Si _（1-x）Ge _x缓冲层上生长的横向排序的影响
3. Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures [J] . Shklyaev A. A., Bolotov L., Poborchii V., Materials science in semiconductor processing . 2018,第期

机译：Kelvin力量和拉曼微观结构与Si（111）种植的不同组合物，在高温下
4. Enhanced Signal Micro-Raman Study of SiGe Nanowires and SiGe/Si Nanowire Axial Heterojunctions Grown Using Au and Ga-Au Catalysts [C] . J. Anaya, A. Torres, J. Jimenez, Materials Research Society Meeting . 2014

机译：使用Au和Ga-au催化剂生长的SiGe纳米线和SiGe / Si纳米线轴向异质结的增强信号微拉曼研究
5. Nano-wire fabrication using anodic aluminum oxide as the template: Experimental studies of low-temperature anodization, electrodeposition and band gap measurement of cadmium sulfide nano-wires using resonance Raman spectroscopy. [D] . Chan, Jimmy. 1998

机译：以阳极氧化铝为模板的纳米线制造：使用共振拉曼光谱法对硫化镉纳米线进行低温阳极氧化，电沉积和带隙测量的实验研究。
6. Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature [O] . Ismael Cosme, Andrey Kosarev, Saraí Zarate-Galvez, 2020

机译：低温（13.56 MHz）等离子体放电沉积的SiGe：H合金中使用H稀释终止Si和Ge原子的研究
7. Enhanced signal micro-raman study of SiGe nanowires and SiGe/Si nanowire axial heterojuntions grown using Au and Ga-Au catalysts [O] . Anaya Julián, Torres Pérez Alfredo, Jiménez Juan, 2015

机译：使用Au和Ga-Au催化剂生长的SiGe纳米线和SiGe / Si纳米线轴向异质结的增强信号微拉曼研究

Raman study of self-assembled SiGe nanoislands grown at low temperatures

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