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首页> 外文期刊>Materials Science Research International >Variation in Preferred Orientations of TiN Thin Films Prepared by Ion Beam Assisted Deposition
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Variation in Preferred Orientations of TiN Thin Films Prepared by Ion Beam Assisted Deposition

机译：离子束辅助沉积制备的TiN薄膜择优取向的变化

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摘要

The effects of various experimental conditions on the preferred orientations of titanium nitride (TiN) thin films were investigated. These films were formed on Si (100) wafers and sapphire (0001) substrates by ion beam assisted deposition (IBAD) with various N/Ti transport ratios, N ion incidence angles, film thicknesses and substrate temperatures. The acceleration voltage of the incident ions was 1 kV. The preferred orientation of the TiN films changed from (111) to (100) as the N/Ti transport ratios and ion incidence angles increased. This phenomenon is caused by the selective damage to crystal growth due to the energy of the bombarding particles. It was also found that an increase in film thickness changed the preferred orientation of the TiN (100) film to a (100) plus (110) orientation. Furthermore, this orientation reverted to (100) with the heating of the substrate during film preparation. It is concluded that these phenomena were caused by the process of minimizing the overall energy. Thus, the heating of the substrate was useful for synthesizing thick TiN (100) films in this preparation method. Transmission electron microscopy (TEM) observation of TiN (100) films suggested that these films had good crystallinity.
机译：研究了各种实验条件对氮化钛（TiN）薄膜择优取向的影响。这些膜是通过具有各种N / Ti传输比，N离子入射角，膜厚度和衬底温度的离子束辅助沉积（IBAD）在Si（100）晶片和蓝宝石（0001）衬底上形成的。入射离子的加速电压为1 kV。随着N / Ti传输比和离子入射角的增加，TiN膜的优选取向从（111）变为（100）。这种现象是由于轰击粒子的能量对晶体生长的选择性破坏所致。还发现，膜厚度的增加将TiN（100）膜的优选取向改变为（100）加（110）取向。此外，在制膜期间，随着基板的加热，该取向恢复为（100）。结论是，这些现象是由使总能量最小化的过程引起的。因此，在该制备方法中，基板的加热对于合成厚的TiN（100）膜很有用。 TiN（100）薄膜的透射电子显微镜（TEM）观察表明，这些薄膜具有良好的结晶度。

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