Study of stresses in thin silicon wafers with near-infrared phase stepping photoelasticity

Tieyu Zheng; Steven Danyluk

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Study of stresses in thin silicon wafers with near-infrared phase stepping photoelasticity

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This paper reports on a study of stress in thin silicon plates sectioned from wafers by a near-infrared transmission technique. Phase stepping was incorporated to determine the magnitude and orientation of stress from fractional birefringence fringe images. The anisotropic relative optic-stress coefficient of (100) silicon was determined and the limitation of the stress orientation measurement is discussed.

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《Journal of Materials Research》 |2002年第1期|36-42|共7页
作者
Tieyu Zheng; Steven Danyluk;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
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Study of stresses in thin silicon wafers with near-infrared phase stepping photoelasticity

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