Structural and electrical transport properties of CdS0.9Se0.1 : In thin films: effect of film thickness

Shahane GS.; Deshmukh LP.

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Structural and electrical transport properties of CdS0.9Se0.1 : In thin films: effect of film thickness

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Thin films of CdS0.9Se0.1:ln (0.05 mol) of various thicknesses have been deposited on to the clean glass substrates using a chemical deposition technique. Composition analysis showed that films were sulphur deficit. Structural investigations on these films revealed the polycrystalline nature of the films with the presence of hexagonal CdS0.9Se0.1 and cubic CdS phases. Grain size increased with the film thickness. Electrical conductivity and thermoelectric power (TEP) measurements have been carried out in 300-550 K temperature range. The conduction activation energy is found to be thickness-dependent, TEP measurements showed n-type conduction. Carrier concentration increased with thickness. (C) 2001 Elsevier Science B.V. AII rights reserved. References: 17

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《Materials Chemistry and Physics》 |2001年第1期|112-116|共5页
作者
Shahane GS.; Deshmukh LP.;
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作者单位

DBF Dayanand Coll Arts & Sci, Dept Elect, Solapur 413002, MS, India.;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;工程基础科学;
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Structural and electrical transport properties of CdS0.9Se0.1 : In thin films: effect of film thickness

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