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首页> 外文期刊>Radiotherapy and oncology: Journal of the European Society for Therapeutic Radiology and Oncology >MOSFET detectors in quality assurance of tomotherapy treatments.
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MOSFET detectors in quality assurance of tomotherapy treatments.

机译：MOSFET探测器在断层疗法治疗中的质量保证。

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BACKGROUND AND PURPOSE: The purpose of this work was to characterize metal oxide semiconductor field-effect transistors (MOSFETs) in a 6MV conventional linac and investigate their use for quality assurance of radiotherapy treatments with a tomotherapy Hi-Art unit. MATERIALS AND METHODS: High sensitivity and standard sensitivity MOSFETs were first calibrated and then tested for reproducibility, field size dependence, and accuracy of measuring surface dose in a 6MV beam as well as in a tomotherapy Hi-Art unit. In vivo measurements were performed on both a RANDO phantom and several head and neck cancer patients treated with tomotherapy and compared to TLD measurements and treatment plan doses to evaluate the performance of MOSFETs in a high gradient radiation field. RESULTS: The average calibration factor found was 0.345+/-2.5%cGy/mV for the high sensitivity MOSFETs tested and 0.901+/-2.4%cGy/mV for the standard sensitivity MOSFETs. MOSFET measured surface doses had an average agreement with ion chamber measurements of 1.55% for the high sensitivity MOSFET and 5.23% for the standard sensitivity MOSFET when averaged over all trials and field sizes tested. No significant dependence on field size was found for the standard sensitivity MOSFETs, however a maximum difference of 5.34% was found for the high sensitivity MOSFET calibration factors in the field sizes tested. Measurements made with MOSFETS on head and neck patients treated on a tomotherapy Hi-Art unit had an average agreement of (3.26+/-0.03)% with TLD measurements, however the average of the absolute difference between the MOSFET measurements and the treatment plan skin doses was (12.2+/-7.5)%. The MOSFET measured patient skin doses also had good reproducibility, with inter-fraction deviations ranging from 1.4% to 6.6%. Similar results were found from trials using a RANDO phantom. CONCLUSIONS: The MOSFETs performed well when used in the tomotherapy Hi-Art unit and did not increase the overall treatment set-up time when used for patient measurements. It was found that MOSFETs are suitable detectors for surface dose measurements in both conventional beam and tomotherapy treatments and they can provide valuable skin dose information in areas where the treatment planning system may not be accurate.
机译：背景与目的：这项工作的目的是表征6MV传统直线加速器中的金属氧化物半导体场效应晶体管（MOSFET），并研究其在用tomotherapy Hi-Art装置进行放射治疗的质量保证中的用途。材料与方法：首先对高灵敏度和标准灵敏度的MOSFET进行校准，然后测试其在6MV射束和tomotherapy Hi-Art装置中的再现性，场大小依赖性以及测量表面剂量的准确性。对RANDO体模和接受过tomotherapy治疗的几位头颈癌患者均进行了体内测量，并与TLD测量和治疗计划剂量进行了比较，以评估MOSFET在高梯度辐射场中的性能。结果：测试的高灵敏度MOSFET的平均校准系数为0.345 +/- 2.5％cGy / mV，标准灵敏度MOSFET的平均校准系数为0.901 +/- 2.4％cGy / mV。 MOSFET的表面剂量与所有灵敏度和标准尺寸的MOSFET的离子室测量值的平均一致性为1.55％，标准灵敏度MOSFET的离子室测量值为5.23％。对于标准灵敏度MOSFET，没有发现对场大小的显着依赖性，但是，在测试的场大小中，高灵敏度MOSFET校准因子的最大差异为5.34％。用MOSFETS对在tomotherapy Hi-Art装置上治疗的头颈患者进行的测量与TLD测量的平均一致性为（3.26 +/- 0.03）％，但是MOSFET测量与治疗计划皮肤之间的绝对差的平均值剂量为（12.2 +/- 7.5）％。 MOSFET测得的患者皮肤剂量也具有良好的重现性，级分间偏差范围为1.4％至6.6％。使用RANDO幻象进行的试验也发现了类似的结果。结论：当在tomotherapy Hi-Art装置中使用时，MOSFET表现良好，并且在用于患者测量时并未增加总体治疗准备时间。已经发现，MOSFET是适用于常规射线和断层治疗的表面剂量测量的检测器，并且它们可以在治疗计划系统可能不准确的区域提供有价值的皮肤剂量信息。

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