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MnSb inclusions in the GaSb matrix studied by X-ray absorption spectroscopy

机译：X射线吸收光谱研究GaSb基体中的MnSb夹杂物

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The MBE processes were performed in order to form the MnSb inclusions. Two kinds of substrates (GaSb and GaAs) as well as growth temperatures (450 and 520 °C) were examined. SEM imaging was performed to determine the shape and size of formed inclusions. In all the samples the inclusions of few hundred nm were formed. Their shapes depended strongly on the type of substrate while the size slightly increases with the growth temperature. The X-ray absorption techniques were used to monitor the local structure around Mn atoms and confirmed that the neighborhood of Mn atoms in the layers was close to that of the MnSb reference powder. We succeed in the formation of the GaSb layers with Mn assembled only into MnSb inclusions on both types of substrates: GaAs(l 1 1)A and GaSb(1 0 0). However, in case of the GaAs( 1 1 1 )A substrates, the atomic order around Mn atoms in MnSb inclusions is less perfect than in case of the GaSb(1 0 0) substrates.
机译：进行MBE工艺以形成MnSb夹杂物。检查了两种衬底（GaSb和GaAs）以及生长温度（450和520°C）。进行SEM成像以确定所形成的夹杂物的形状和尺寸。在所有样品中形成了几百nm的夹杂物。它们的形状在很大程度上取决于基底的类型，而尺寸则随着生长温度的增加而略有增加。 X射线吸收技术用于监测Mn原子周围的局部结构，并确认层中Mn原子的邻域接近MnSb参考粉末的邻域。我们成功地在两种类型的衬底上形成了仅将Mn组装成MnSb夹杂物的GaSb层：GaAs（l 1 1）A和GaSb（1 0 0）。但是，在GaAs（1 1 1）A衬底的情况下，MnSb夹杂物中Mn原子周围的原子序数不如在GaSb（1 0 0）衬底的情况下理想。

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