Defects in silicon introduced by helium implantation and subsequent annealing

I. Capan; J. Bak-Misiuk; B. Pivac

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Defects in silicon introduced by helium implantation and subsequent annealing

机译：氦气注入和随后退火导致的硅缺陷

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Formation and morphology of defects, including bubbles and voids, induced in silicon by He~+ implantation and subsequent high temperature and pressure treatment have been studied by means of X-ray diffraction method and grazing incidence small angle X-ray scattering (GISAXS). Enhanced pressure affects the formation of voids and/or of large cavities inducing creation of faceted structures. Moreover, high pressure treatment suppresses creation of interstitial-related defects.

机译：利用X射线衍射法和掠入射小角度X射线散射（GISAXS）研究了He〜+注入以及随后的高温高压处理在硅中引起的缺陷的形成和形态，包括气泡和空隙。增强的压力会影响形成多面结构的空隙和/或大空腔的形成。此外，高压处理抑制了与间隙相关的缺陷的产生。

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《Radiation Physics and Chemistry》 |2011年第10期|共5页
作者
I. Capan; J. Bak-Misiuk; B. Pivac;
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正文语种 eng
中图分类光学;
关键词
Silicon; Implantation; Defect structure; GISAXS; Annealing; Hydrostatic pressure;

机译：硅;植入;缺陷结构;GISAXS;退火;静水压力;

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1. Defects in silicon introduced by helium implantation and subsequent annealing [J] . I. Capan, J. Bak-Misiuk, B. Pivac Radiation Physics and Chemistry . 2011,第10期

机译：氦气注入和随后退火导致的硅缺陷
2. A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process [J] . Hasanuzzaman Mohammad, Haddara Yaser M., Knights Andrew P. Journal of Applied Physics . 2012,第6期

机译：氦注入和后续退火过程中硅中空洞逸出的数学模型
3. A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process [J] . Mohammad Hasanuzzaman, Yaser M. Haddara, Andrew P. Knights Journal of Applied Physics . 2012,第6期

机译：氦注入和后续退火过程中硅中空洞逸出的数学模型
4. Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing [C] . Pavel Hazdra, Volodymyr Komarnitskyy International Autuman Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2008

机译：通过氢气和氦气植入和随后的退火引入硅中引入的辐射缺陷和热量供体
5. Phosphorus-defect interactions during thermal annealing of ion implanted silicon. [D] . Keys, Patrick Henry. 2001

机译：离子注入硅的热退火过程中的磷缺陷相互作用。
6. Effect of Annealing on Microstructures and Hardening of Helium-Hydrogen-Implanted Sequentially Vanadium Alloys [O] . Shaoning Jiang, Zhiming Wang 2018

机译：退火对氦氢顺序注入钒合金组织和硬化的影响
7. Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing [O] . Pavel Hazdra, Volodymyr Komarnitskyy 2015

机译：通过氢和氦注入以及随后的退火在硅中引入辐射缺陷和热供体

Defects in silicon introduced by helium implantation and subsequent annealing

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