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首页> 外文期刊>RSC Advances >Integration of large single-grain Pb(Zr, Ti)O-3 into low-temperature polycrystalline silicon thin-film transistors for system-on-glass display
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Integration of large single-grain Pb(Zr, Ti)O-3 into low-temperature polycrystalline silicon thin-film transistors for system-on-glass display

机译：将大型单晶Pb（Zr，Ti）O-3集成到用于玻璃系统显示的低温多晶硅薄膜晶体管中

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摘要

A large single-grain Pb(Zr, Ti)O-3 (PZT) film was integrated into low-temperature polycrystalline silicon (poly-Si) thin-film transistors fabricated on a glass substrate. The poly-Si was crystallized by NiSi2 seed-induced lateral crystallization (SILC). The SILC poly-Si had a superior electrical performance to other crystallization methods as a result of its high crystalline volume fraction (91.2%). PZT with a perovskite phase is generally obtained at 800 degrees C, which is not suitable for glass substrates. Therefore we developed a low-temperature perovskite PZT using an artificially controlled seeding process. An artificially controlled nucleation seed was first formed by rapid thermal annealing at 650 degrees C in 1 s pulses and a single seed was then grown in a tube furnace at 550 degrees C for 2 h. The resulting device had a large memory window (3.5 V) and a highly reliable memory operation. This approach could potentially be applied to the next generation of non-volatile memory devices as well as in integrated system-on-glass displays.
机译：将大的单晶Pb（Zr，Ti）O-3（PZT）膜集成到在玻璃基板上制造的低温多晶硅（poly-Si）薄膜晶体管中。多晶硅通过NiSi2晶种诱导的横向结晶（SILC）进行结晶。由于其高的晶体体积分数（91.2％），SILC多晶硅的电性能优于其他结晶方法。具有钙钛矿相的PZT通常在800摄氏度下获得，不适用于玻璃基板。因此，我们使用人工控制的播种工艺开发了低温钙钛矿PZT。首先在650摄氏度下以1 s脉冲通过快速热退火形成了人工控制的成核晶种，然后在550摄氏度的管式炉中生长了2 h。所得的器件具有较大的存储器窗口（3.5 V）和高度可靠的存储器操作。该方法可以潜在地应用于下一代非易失性存储设备以及集成的玻璃上系统显示器中。

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