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Gate capacitance model for the design of graphene nanoribbon array field-effect transistors

机译:石墨烯纳米带阵列场效应晶体管设计的栅极电容模型

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In graphene nanoribbon (GNR) array field-effect transistors with sufficiently narrow ribbon widths and ribbon-to-ribbon distances, the gate capacitance and relevant carrier mobility are strongly affected by fringe field effects at the ribbon edges and the fringe fields between neighboring GNRs may overlap. To overcome the difficulties of predicting the channel properties of GNR array devices in design and characterization and of extracting accurate carrier mobility with complex fringe field effects, a simplified model for the prediction of gate capacitances in the GNR array channels of field-effect devices was developed. Numerical analyses were carried out, first, using the finite element method to understand how the gate capacitance of the GNR array channel is affected by changes in the configuration of the GNR arrays and the choice of gate dielectrics. Based on this analysis, a general model for determining the gate capacitance as a function of various configurations and material variables was formulated. This model was verified by performing additional finite element analyses and by making comparisons with previously reported experimental results. Good agreement among this data implies the generality of this model.
机译:在具有足够窄的带宽度和带到带距离的石墨烯纳米带(GNR)阵列场效应晶体管中,栅极电容和相关的载流子迁移率会受到带边缘的边缘场效应的强烈影响,相邻GNR之间的边缘场可能交叠。为了克服在设计和表征中预测GNR阵列器件的沟道特性以及提取具有复杂边缘场效应的准确载流子迁移率的困难,开发了一种简化模型来预测场效应器件GNR阵列通道中的栅极电容。 。首先,使用有限元方法进行了数值分析,以了解GNR阵列通道的栅极电容如何受到GNR阵列配置变化和栅极电介质选择的影响。基于该分析,制定了确定栅极电容与各种配置和材料变量的函数的通用模型。通过执行其他有限元分析并与先前报告的实验结果进行比较,验证了该模型。这些数据之间的良好一致性暗示了该模型的普遍性。

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