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Carbon concentration dependent grain growth of Cu2ZnSnS4 thin films

机译：碳浓度依赖于Cu2ZnSnS4薄膜的晶粒生长

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摘要

Organic solvents are commonly used in ink precursors of Cu2ZnSnS4 (CZTS) nanocrystals to make thin films for applications such as solar cells. However, the traces of carbon residual left behind by the organic solvents after high-temperature annealing is generally considered to restrict the growth of nanocrystals to form large grains. This work reported the first systematic study on the influence of carbon content of organic solvents on the grain growth of CZTS nanomaterial during high temperature sulfurization annealing. Solvents with carbon atom per molecule varying from 3 to 10 were used to made ink of CZTS nanocrystals for thin film deposition. It has been found that, after high temperature sulfurization annealing, a bilayer structure was formed in the CZTS film using organic solvent containing 3 carbon atoms per solvent molecule based on glycerol and 1,3-propanediol. The top layer consisted of closely-packed large grains and the bottom layer was made of as-synthesized nanoparticles. In contrast, the CZTS film made with the solvent molecule with more carbon atoms including 1,5-pentanediol (5 carbon atoms) and 1,7-heptanediol (7 carbon atoms) consisted of nanoparticles embedded with large crystals. It is believed that the carbon residues left behind by the organic solvents affected the necking of CZTS nanocrystals to form large grains through influencing the surface property of nanocrystals. Furthermore, it has also been observed that the solvent affected the thickness of MoS2 layer which was formed between CZTS and Mo substrate. A thinner MoS2 film (50 nm) was obtained with the slurry using carbon-rich terpineol as solvent whereas the thickest MoS2 (350 nm) was obtained with the film made from 1,3-propanediol based solvent. The evaluation of the photoactivity of the CZTS thin films has demonstrated that a higher photocurrent was generated with the film containing more large grains.
机译：有机溶剂通常用于Cu2ZnSnS4（CZTS）纳米晶体的墨水前驱体中，以制造用于太阳能电池等应用的薄膜。然而，通常认为在高温退火之后有机溶剂留下的痕量碳残留物限制了纳米晶体形成大晶粒的生长。这项工作报道了关于高温硫化退火过程中有机溶剂碳含量对CZTS纳米材料晶粒生长影响的第一个系统研究。每分子碳原子数为3到10的溶剂用于制备CZTS纳米晶体的墨水，用于薄膜沉积。已经发现，在高温硫化退火之后，使用基于甘油和1，3-丙二醇的每个溶剂分子包含3个碳原子的有机溶剂在CZTS膜中形成双层结构。顶层由紧密堆积的大颗粒组成，底层由合成后的纳米颗粒制成。相反，由具有更多碳原子的溶剂分子制成的CZTS膜包括1，5-戊二醇（5个碳原子）和1,7-庚二醇（7个碳原子），由嵌入大晶体的纳米颗粒组成。据信有机溶剂留下的碳残留物通过影响纳米晶体的表面性质而影响CZTS纳米晶体的颈缩，从而形成大晶粒。此外，还观察到溶剂影响了在CZTS和Mo衬底之间形成的MoS 2层的厚度。使用富含碳的松油醇作为溶剂，用淤浆可获得较薄的MoS2膜（50 nm），而用1,3-丙二醇基溶剂制成的膜可获得最厚的MoS2（350 nm）。 CZTS薄膜的光活性评估表明，包含更多大晶粒的薄膜产生了更高的光电流。

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