• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Influence of surface properties on the performance of Cu(In,Ga)(Se,S)(2) thin-film solar cells using Kelvin probe force microscopy
【24h】

Influence of surface properties on the performance of Cu(In,Ga)(Se,S)(2) thin-film solar cells using Kelvin probe force microscopy

机译：开尔文探针力显微镜对表面性能对Cu（In，Ga）（Se，S）（2）薄膜太阳能电池性能的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have investigated the sulfurization process in a Cu(In,Ga)(Se,S)(2) (CIGSS) absorber layer fabricated by a two-step sputter and selenization/sulfurization method in order to make an ideal double-graded bandgap profile and increase the open circuit voltage (V-oc). The sulfurization process was controlled by temperature from 570 degrees C to 590 degrees C without changing H2S gas concentration and reaction time. Although the energy band-gap of the CIGSS absorber layer was increased with increasing sulfurization temperature,the V-oc of the completed CIGSS device fabricated at 590 degrees C sulfurization temperature did not increase. In order to investigate this abnormal V-oc behavior,the CIGSS absorber layer was measured by local electrical characterization utilizing Kelvin probe force microscopy,especially in terms of grain boundary potential and surface work function. Consequently,the abnormal V-oc behavior was attributed to the degradation of grain boundary passivation by the strong sulfurization process. The optimum sulfurization temperature plays an important role in enhancement of grain boundary passivation. It was also verified that the V-oc degradation in the CIGSS solar cell fabricated by the two-step method is more influenced by the grain boundary passivation quality in comparison with the slight non-uniformity of material composition among grains.
机译：我们已经研究了通过两步溅射和硒化/硫化方法制造的Cu（In，Ga）（Se，S）（2）（CIGSS）吸收层中的硫化过程，以便获得理想的双梯度带隙分布并增加开路电压（V-oc）。硫化过程的温度从570摄氏度控制到590摄氏度，而无需改变H2S气体浓度和反应时间。尽管随着硫化温度的升高，CIGSS吸收层的能带隙增加，但在590℃硫化温度下制造的完整CIGSS器件的V-oc却没有增加。为了研究这种异常的V-oc行为，使用开尔文探针力显微镜通过局部电学表征来测量CIGSS吸收层，尤其是在晶界势和表面功函数方面。因此，异常的V-oc行为归因于强硫化过程导致晶界钝化的降低。最佳硫化温度对增强晶界钝化起着重要作用。还证实了，与晶粒间的材料组成略有不均匀相比，通过两步法制造的CIGSS太阳能电池中的V-oc降解受晶粒边界钝化质量的影响更大。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号