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SiC nanocrystals: high-rate deposition and nano-scale control by thermal plasma

机译：SiC纳米晶体：通过热等离子体进行高速沉积和纳米级控制

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摘要

This work used thermal plasma to enhance the deposition process of SiC nanocrystals, with SiCl4 and CH4 as the Si source and C source, respectively. Thin films containing SiC nanocrystals, a-Si and graphite were deposited on the substrates. The morphology and crystalline structure of the samples were characterized by various techniques, including SEM, TEM, and XRD. SiC nanocrystals were observed being covered by carbon films and embedded in the network formed by graphite and a-Si. The effect of SiCl4 input rate on the deposition process and product properties was studied in detail, combining characterization techniques and optical emission spectroscopy (OES) diagnostic results. Based on the OES diagnostic of the plasma zone, the concentrations of atomic Si and C in the gas phase are concluded to be the main factors affecting the deposition process. Finally, a simple deposition mechanism is deduced based on the experimental results, which indicates the formation of SiC nanocrystals through the assembly of atomic species in the plasma.
机译：这项工作使用热等离子体来增强SiC纳米晶体的沉积过程，分别使用SiCl4和CH4作为Si源和C源。包含SiC纳米晶体，非晶硅和石墨的薄膜沉积在基板上。样品的形貌和晶体结构通过各种技术进行表征，包括SEM，TEM和XRD。观察到SiC纳米晶体被碳膜覆盖，并嵌入由石墨和a-Si形成的网络中。结合表征技术和光学发射光谱（OES）诊断结果，详细研究了SiCl4输入速率对沉积过程和产品性能的影响。根据对等离子体区的OES诊断，得出气相中的硅和碳原子浓度是影响沉积过程的主要因素。最后，根据实验结果推导了一种简单的沉积机理，这表明通过等离子体中原子种类的组装形成了SiC纳米晶体。

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