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首页> 外文期刊>RSC Advances >Controlled assembly of Bi2S3 architectures as Schottky diode, supercapacitor electrodes and highly efficient photocatalysts
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Controlled assembly of Bi2S3 architectures as Schottky diode, supercapacitor electrodes and highly efficient photocatalysts

机译：Bi2S3体系结构的受控组装，例如肖特基二极管，超级电容器电极和高效的光催化剂

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Bismuth sulfide (Bi2S3) microflowers have been successfully fabricated through a one-pot hydrothermal method. The structures and morphologies of the as-obtained products are characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Raman spectroscopy. The experimental results show that Bi2S3 microflowers are composed of many microrods with lengths of 18-20 mu m. Metal/semiconductor/metal (MSM) sandwich structures are fabricated, and the current-voltage (I-V) characteristics exhibit a clear back-to-back Schottky-diode behavior. The galvanostatic charge-discharge performance illustrates that the prepared Bi2S3 microflowers exhibit good performance for discharge efficiency at current densities from 1 mA cm(-2) to 10 mA cm(-2). Furthermore, the as-synthesized Bi2S3 microflowers are also used as the efficient UV-light photocatalysts for the photocatalytic degradation of methylene orange (MO) under light illumination, which shows almost complete degradation (similar to 95%) of MO dye.
机译：通过一锅水热法成功地制备了硫化铋（Bi2S3）微型花。所得产物的结构和形态通过X射线衍射（XRD），场发射扫描电子显微镜（FESEM），透射电子显微镜（TEM）和拉曼光谱表征。实验结果表明，Bi2S3微型花由许多微棒组成，长度为18-20μm。制作了金属/半导体/金属（MSM）夹层结构，并且电流-电压（I-V）特性表现出清晰的背对背肖特基二极管特性。恒电流充放电性能表明，制备的Bi2S3微花在1 mA cm（-2）至10 mA cm（-2）的电流密度下表现出良好的放电效率性能。此外，合成后的Bi2S3微型花还被用作有效的紫外线光催化剂，用于在光照下亚甲基橙（MO）的光催化降解，显示出MO染料几乎完全降解（类似于95％）。

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