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首页> 外文期刊>RSC Advances >Thermal boundary resistance at Au/Ge/Ge and Au/Si/Ge interfaces
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Thermal boundary resistance at Au/Ge/Ge and Au/Si/Ge interfaces

机译：Au / Ge / Ge和Au / Si / Ge界面的热边界电阻

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摘要

Amorphous Ge (a-Ge), crystalline Ge (c-Ge), and amorphous Si (a-Si) thin films were deposited on a Ge substrate at different temperatures by magnetron sputtering. We measured thermal boundary resistance (TBR) in Au/Ge/Ge and Au/Si/Ge three-layer samples. The measured TBR in Au/a-Ge/Ge and Au/a-Si/Ge decreased slightly with increasing deposition temperature. The measured TBR values were larger than the values predicted by the diffuse mismatch model. Furthermore, it is interesting to note that the measured TBR in Au/c-Ge/Ge was twofold larger than that in Au/a-Ge/Ge. Cross-sectional transmission electron microscopy was conducted to investigate interfacial morphology of the samples. The results indicate that the crystalline state of the deposited thin films play an important role in TBR by modifying phonon density of states and interfacial properties. Our findings are of great importance for applications involving thermal management of micro- and optoelectronic devices, and for the development of thermal barrier coatings and thermoelectric materials with high figures-of-merit.
机译：通过磁控溅射在不同温度下在Ge衬底上沉积非晶Ge（a-Ge），晶体Ge（c-Ge）和非晶Si（a-Si）薄膜。我们在Au / Ge / Ge和Au / Si / Ge三层样品中测量了热边界电阻（TBR）。随着沉积温度的升高，在Au / a-Ge / Ge和Au / a-Si / Ge中测得的TBR略有降低。测得的TBR值大于弥散失配模型预测的值。此外，有趣的是，在Au / c-Ge / Ge中测得的TBR比在Au / a-Ge / Ge中测得的TBR大两倍。进行横截面透射电子显微镜以研究样品的界面形态。结果表明，沉积的薄膜的结晶状态通过改变状态的声子密度和界面性质而在TBR中起重要作用。我们的发现对于涉及微电子和光电设备的热管理的应用以及对具有高品质因数的热障涂层和热电材料的开发非常重要。

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