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Evaluating the merit of ALD coating as a barrier against hydrogen degradation in capacitor components

机译：评估ALD涂层作为防止电容器组件中氢降解的屏障的优点

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The degradation of the properties of electronic materials due to exposure to hydrogen gas is a common problem in electro-ceramic device components. In this study, we explore atomic layer deposition (ALD) coatings as a potential barrier against hydrogen gas. Three ALD chemistries of ZnO, Al2O3, and HfO2 with different thicknesses were coated onto BaTiO3 capacitors, and their merit as hydrogen gas barriers at high temperatures was evaluated by I-V and impedance spectroscopy which could monitor the degradation of resistivity. These experimental investigations provide the temperature of merit (T-0) and the proton (H-ion) diffusion coefficients of the ALD layers, which can be used to evaluate their barrier effectiveness. Transmission electron microscopy (TEM) analysis was applied to examine the ALD layers before and after the I-V tests and find out the physical dimensions, conformity, and structure (amorphous and crystalline) of the ALD layers. We determine that the failure of the barrier characteristics at elevated temperatures is due to crystallization. The diffusion coefficient associated with protons before and after crystallizations in ALD layers was determined. Within the chemistries investigated here, the most effective ALD layers are made of HfO2 with an amorphous structure.
机译：由于暴露于氢气导致电子材料的性能下降是电陶瓷器件部件中的普遍问题。在这项研究中，我们探索原子层沉积（ALD）涂层作为对氢气的潜在屏障。将三种不同厚度的ZnO，Al2O3和HfO2的ALD化学物质涂覆到BaTiO3电容器上，并通过I-V和阻抗光谱法（可监测电阻率的下降）评估它们作为高温氢气阻隔层的优点。这些实验研究提供了ALD层的优异温度（T-0）和质子（H离子）扩散系数，可用于评估其阻隔效果。在I-V测试之前和之后，使用透射电子显微镜（TEM）分析来检查ALD层，并找出ALD层的物理尺寸，一致性和结构（非晶和晶体）。我们确定高温下势垒特性的失败是由于结晶。确定与质子在ALD层中结晶之前和之后相关的扩散系数。在这里研究的化学物质中，最有效的ALD层由具有非晶结构的HfO2制成。

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