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首页> 外文期刊>RSC Advances >Electrochemical synthesis of p-CuO thin films and development of a p-CuO-ZnO heterojunction and its application as a selective gas sensor
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Electrochemical synthesis of p-CuO thin films and development of a p-CuO-ZnO heterojunction and its application as a selective gas sensor

机译：p-CuO薄膜的电化学合成及p-CuO / n-ZnO异质结的发展及其在选择性气体传感器中的应用

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摘要

p-CuO thin films have been synthesized on indium tin oxide (ITO)-coated glass substrates and on ZnO/ITO-coated glass substrates using a new, simple, cost-effective electrochemical technique (galvanic deposition) at room temperature. X-ray diffraction (XRD) studies of the films show a monoclinic phase of CuO, and UV-vis spectroscopy of the CuO/ITO film shows an indirect band-gap energy of about 1.85 eV. The surface morphology of CuO thin film consists of a c-axis-grown regular macroporous network structure with deep cavities surrounded by thin solid walls, which are suitable for gas trapping and sensing. Current-voltage characteristics of the formed p-CuO-ZnO film show good rectifying behavior. At 1 V reverse bias, the leakage current was as low as 2 x 10(-9) A compared to a current of 1.2 x 10(-7) A at the same forward bias, resulting in a forward-to-reverse current ratio of about 60. The ideality factor of the diode obtained was quite high, at about 9.5. The frequency dependence of the small signal AC response in both R-p-C-p and R-s-C-s mode of the fabricated heterojunction were measured at a reverse bias of 1.5 V. In the presence of 10 000 ppm gas exposure for gases, including CH4, H2S and CO, frequency-dependent changes in AC responses are different for different gases. The variation of the reactance of the fabricated device shows different behaviour with exposure to different types of gases. The minimum in reactance occurring at different frequencies for different gases indicates the selectivity of the device for gas sensing.
机译：在室温下，已使用一种新的，简单的，具有成本效益的电化学技术（电沉积），在涂有铟锡氧化物（ITO）的玻璃基板和ZnO / ITO涂层的玻璃基板上合成了p-CuO薄膜。薄膜的X射线衍射（XRD）研究显示了CuO的单斜晶相，CuO / ITO薄膜的紫外可见光谱显示了约1.85 eV的间接带隙能量。 CuO薄膜的表面形貌由c轴生长的规则大孔网络结构组成，深孔被薄壁固体壁包围，适合气体捕集和传感。所形成的p-CuO / n-ZnO膜的电流-电压特性显示出良好的整流行为。在1 V反向偏置下，泄漏电流低至2 x 10（-9）A，而在相同正向偏置下的泄漏电流为1.2 x 10（-7）A，从而产生正反向电流比约为60。获得的二极管的理想因数很高，约为9.5。在1.5 V的反向偏置下，在制造的异质结的RpCp和RsCs模式下测量小信号AC响应的频率依赖性。在暴露于10000 ppm的气体（包括CH4，H2S和CO）的情况下，对于不同的气体，AC响应的依赖变化是不同的。所制造的器件的电抗的变化在暴露于不同类型的气体时显示出不同的行为。对于不同气体，在不同频率下发生的电抗最小值表明该设备对气体传感的选择性。

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