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首页> 外文期刊>RSC Advances >Molecular level controlled fabrication of highly transparent conductive reduced graphene oxide/silver nanowire hybrid films
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Molecular level controlled fabrication of highly transparent conductive reduced graphene oxide/silver nanowire hybrid films

机译：分子水平控制的高透明导电性氧化石墨烯/银纳米线杂化薄膜的制备

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摘要

Due to the scalability of production and the convenience in processing, graphene oxide (GO) has become an important precursor for the fabrication of transparent conductive films (TCFs). Developing a method to reduce the high contact resistance between the GO sheets, which is mainly due to the presence of a huge number of intersheet junctions, is the key for these applications. Here, we demonstrate a method of molecular level controlled fabrication of hybrid TCFs composed of 1-dimensional (1D) silver nanowires (Ag NWs) and 2-dimensional (2D) reduced graphene oxide (rGO) sheets. The ultra-large graphene oxide (UL-GO) sheets were transferred onto the quartz substrate via the Langmuir-Blodgett (L-B) method and then covered with Ag NW by the spin-coating method. The hybrid film was then reduced by chemical reduction using hydrazine hydrate. Upon varying the amount of Ag NW, the reduced UL-GO/Ag NW hybrid films show low sheet resistance ranging 13 to 48 Omega sq(-1) with optical transmittance ranging from 71.9% to 91.2%. The direct current (DC) to optical conductivity ratio of the hybrid films can reach up to 81, which is comparable to that of indium tin oxide (ITO).
机译：由于生产的可扩展性和加工的便利性，氧化石墨烯（GO）已经成为制造透明导电膜（TCF）的重要前体。对于这些应用，开发一种主要是由于存在大量的片间结而降低GO片之间的高接触电阻的方法是关键。在这里，我们演示了由一维（1D）银纳米线（Ag NWs）和二维（2D）还原氧化石墨烯（rGO）片组成的混合TCF的分子水平控制制造方法。通过Langmuir-Blodgett（L-B）方法将超大型氧化石墨烯（UL-GO）片转移到石英基板上，然后通过旋涂法用Ag NW覆盖。然后通过使用水合肼的化学还原来还原杂化膜。在改变Ag NW的量后，还原的UL-GO / Ag NW杂化膜的薄层电阻范围为13至48 Omega sq（-1），透光率范围为71.9％至91.2％。杂化膜的直流（DC）与光导率之比可以达到81，这与铟锡氧化物（ITO）相当。

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