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Trap induced tunable unusual dielectric properties in transition metal doped reduced graphene oxide

机译:过渡金属掺杂还原氧化石墨烯中陷阱引起的可调谐异常介电特性

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Graphene being an excellent electronic material has poor dielectric properties. In addition to unusual dielectric response (permittivity increases with frequency) due to trap induced capacitance, here we have tuned the trap states to achieve a giant value of permittivity (epsilon similar to 2214) and remarkably high magnetodielectric effect (23%) in nickel doped reduced graphene oxide (RGO). The current-voltage characteristics in the space charge limited conduction give quantitative information about these trap states. We estimate an average trap density of 1.92 x 10(22) m(-3) at room temperature. We believe that this transition metal doped RGO with tunable dielectrics has potential applications in electrical storage devices.
机译:石墨烯是一种优异的电子材料,其介电性能较差。除了由陷阱感应电容引起的异常介电响应(介电常数随频率增加)外,在这里我们还对陷阱状态进行了调整,以实现巨大的介电常数值(类似于2214的ε)和掺杂镍的显着高磁电效应(23%)还原氧化石墨烯(RGO)。空间电荷受限传导中的电流-电压特性给出了有关这些陷阱状态的定量信息。我们估计室温下的平均陷阱密度为1.92 x 10(22)m(-3)。我们相信,这种带有可调电介质的过渡金属掺杂的RGO在电存储设备中具有潜在的应用。

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