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Tuning emission and Stokes shift of CdS quantum dots via copper and indium co-doping

机译：通过铜和铟共掺杂来调谐CdS量子点的发射和斯托克斯位移

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摘要

Strongly luminescent copper and indium co-doped CdS quantum dots (CuIn-doped CdS QDs) were synthesized from copper iodide, indium acetate, cadmium oleate, and 1-dodecanethiol as starting compounds in octadecene solvent. We demonstrated that when co-doping with In, Cu ions can homogeneously dope into CdS QDs and exist in the +1 state. The as-prepared doped QDs exhibited photoluminescence (PL) in the range of 590-800 nm, with a maximum fluorescence quantum yield (QY) of 40%. They also exhibited tunable large Stokes shifts from 100 nm to 300 nm via tuning dopant concentrations of Cu and In. Such an extremely large Stokes shift dramatically decreased the self-reabsorption of QDs. Furthermore, the CuIn-doped CdS QDs exhibited excellent thermal stability and lost only approximately 20% of their emission QY when the temperature was increased from 20 degrees C to 150 degrees C. These features make these QDs suitable as emitters for application in lighting.
机译：在十八碳烯溶剂中，以碘化铜，乙酸铟，油酸镉和1-十二烷硫醇为原料，合成了强发光的铜和铟共掺杂的CdS量子点（CuIn掺杂的CdS QD）。我们证明了当与In共掺杂时，Cu离子可以均匀地掺杂到CdS QD中并以+1状态存在。所制备的掺杂QD表现出在590-800 nm范围内的光致发光（PL），最大荧光量子产率（QY）为40％。通过调节铜和铟的掺杂剂浓度，它们还显示出从100 nm到300 nm的可调大斯托克斯位移。如此大的斯托克斯位移极大地降低了量子点的自重吸收。此外，当温度从20摄氏度增加到150摄氏度时，掺杂CuIn的CdS QD表现出出色的热稳定性，并且仅损失其发射QY的大约20％。这些特性使这些QD适合用作照明应用的发射器。

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