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Synthesis of Cu(OH)(2) and CuO nanotubes arrays on a silicon wafer

机译：在硅晶片上合成Cu（OH）（2）和CuO纳米管阵列

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摘要

We report the synthesis of copper hydroxide (Cu(OH)(2)) and cupric oxide (CuO) nanotubes arrays on a silicon wafer. It is the first time, to the authors' knowledge, that Cu(OH)(2) and CuO tubes have been synthesized on another substrate than a copper foil. Monocrystalline Cu(OH)(2) tubes were grown, on a homogeneous copper layer previously evaporated on the top of the wafer, by oxidation of this copper layer in two successive alkaline solutions containing Na(OH) and (NH4)(2)S2O8 each. The first solution is used to control the tubes morphology and density on the wafer and the second one to accelerate the tubes growth. By changing the first solution concentration, lengths between 3.5 mu m and 6.6 mu m were obtained and a mean external diameter close to 100 nm could be reached. For such a low external diameter, the internal diameter was equal to 75 nm. An annealing at 200 degrees C during 1 h under static air leads to the dehydration of Cu(OH)(2) tubes into CuO ones. The morphology of the tubes before and after annealing is almost identical, so it is possible to obtain CuO nanotubes with a mean external diameter around 100 nm. This value is much smaller than the diameters of several hundred nanometers published up to now for CuO tubes. After annealing, the presence of Cu2O, due at least partially to a diffusion phenomenon at the interface copper layer/CuO, has been detected.
机译：我们报告了硅晶片上的氢氧化铜（Cu（OH）（2））和氧化铜（CuO）纳米管阵列的合成。据作者所知，这是第一次在不同于铜箔的另一基板上合成了Cu（OH）（2）和CuO管。通过在包含Na（OH）和（NH4）（2）S2O8的两个连续碱性溶液中对该铜层进行氧化，使单晶Cu（OH）（2）管生长在预先在晶片顶部蒸发的均匀铜层上每。第一种解决方案用于控制晶片上的管形貌和密度，第二种解决方案用于加速管的生长。通过改变第一溶液的浓度，获得了3.5μm至6.6μm的长度，并且可以达到接近100nm的平均外径。对于如此低的外径，内径等于75nm。在静态空气下于200摄氏度下进行1小时的退火会导致Cu（OH）（2）管脱水成CuO管。退火前后管的形态几乎相同，因此可以获得平均外径约为100 nm的CuO纳米管。该值比迄今为止公布的用于CuO管的几百纳米的直径小得多。退火之后，已经检测到至少部分由于在界面铜层/ CuO上的扩散现象而导致的Cu2O的存在。

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