首页> 外国专利> Specifying method for Cu contamination processes and detecting method for Cu contamination during reclamation of silicon wafers, and reclamation method of silicon wafers

Specifying method for Cu contamination processes and detecting method for Cu contamination during reclamation of silicon wafers, and reclamation method of silicon wafers

机译:硅晶片的回收中的Cu污染处理的确定方法和Cu污染的检测方法以及硅晶片的回收方法

摘要

A method of specifying a Cu-contamination-causative step or steps in a Si wafer reclamation process including plural steps in combination, comprising: using p-type Si wafers, or p-type Si wafers and n-type Si wafers as monitor wafers, and performing a measuring operation for measuring the electrical resistance of the monitor wafers at least once before and after a single step or a series of successive steps during the Si wafer reclamation process. The present invention is capable of nondestructively, simply, and accurately detecting Cu that can contaminate Si wafers during a Si wafer reclamation process and is capable of specifying a Cu-contamination-causative process.
机译:确定包括多个步骤的Si晶片回收工艺中的一个或多个引起Cu污染的步骤的方法,该方法包括:使用p型Si晶片或p型Si晶片和n型Si晶片作为监控晶片,在Si晶片回收处理中的一个步骤或一系列连续步骤之前和之后,至少执行一次测量操作,以测量监测器晶片的电阻。本发明能够无损,简单且准确地检测在Si晶片回收处理期间会污染Si晶片的Cu,并且能够确定引起Cu污染的处理。

著录项

  • 公开/公告号US6884634B2

    专利类型

  • 公开/公告日2005-04-26

    原文格式PDF

  • 申请/专利权人 TETSUO SUZUKI;SATORU TAKADA;

    申请/专利号US20020255668

  • 发明设计人 TETSUO SUZUKI;SATORU TAKADA;

    申请日2002-09-27

  • 分类号H01L21/00;H01L21/66;

  • 国家 US

  • 入库时间 2022-08-21 22:20:04

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