• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties
【24h】

Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties

机译：InGaAs / GaAsP多量子阱中铟扩散生长温度和光电性能的研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

InGaAs/GaAsP multiple quantum wells (MQWs) structures were grown by metal-organic chemical vapor deposition and the effect of the growth temperature on the interfacial crystal quality was characterized by high-resolution X-ray diffraction and photoluminescence. The surface roughness of MQWs was measured by atomic force microscopy for evaluating the surface quality. The existence of an indium diffusion zone (InGaAsP) between InGaAs and GaAsP was demonstrated by secondary ion mass spectrometry profiles in the growth direction. The results suggest the different diffusion widths originate from the growth temperature variation. A smoother surface and higher quality interface of MQWs was obtained at 650 degrees C growth temperature. Furthermore, the phenomena of current self-oscillations were confirmed through current-voltage measurements at room temperature, which can be attributed to the negative differential resistance effect. The influence of the growth temperature on the crystal quality of InGaAs/GaAsP MQWs was used for the optimization of technological parameters.
机译：通过金属有机化学气相沉积法生长了InGaAs / GaAsP多量子阱（MQWs）结构，并通过高分辨率X射线衍射和光致发光表征了生长温度对界面晶体质量的影响。 MQW的表面粗糙度通过原子力显微镜测量以评估表面质量。通过在生长方向上的二次离子质谱图证明了InGaAs和GaAsP之间存在铟扩散区（InGaAsP）。结果表明，不同的扩散宽度源自生长温度的变化。在650摄氏度的生长温度下获得了更光滑的表面和更高质量的MQW界面。此外，通过在室温下进行电流-电压测量可以确认电流自激振荡现象，这可以归因于负差分电阻效应。利用生长温度对InGaAs / GaAsP MQWs晶体质量的影响来优化工艺参数。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号