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首页> 外文期刊>RSC Advances >Synthesis and spectral properties of double D-pi-A mono-cyanines as well as preparation of near infrared silicon-based materials
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Synthesis and spectral properties of double D-pi-A mono-cyanines as well as preparation of near infrared silicon-based materials

机译：双D-pi-A单菁的合成和光谱性质以及近红外硅基材料的制备

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摘要

Three kinds of new double D-pi-A mono-cyanines D1, D2 and D3 were synthesized for the surface modification of monocrystalline silicon to prepare near infrared silicon-based materials. There was a strong surface photovoltage response in the range of 900-1250 nm compared with silicon materials when double D-pi-A mono-cyanines were bound on the monocrystalline silicon material surface. To explore the effect of the double D-pi-A mono-cyanines on the light absorption characteristics of silicon materials, the absorption properties, films on monocrystalline silicon surfaces and the surface photovoltage response of three double D-pi-A mono-cyanines were investigated. The results demonstrated that the order of the intensity of the surface photovoltage response was Si/D3 > Si/D2 > Si/D1, and no absorption properties of the silicon materials in the near infrared region were improved, yielding near infrared silicon-based materials.
机译：合成了三种新型的双D-pi-A单菁D1，D2和D3，用于单晶硅的表面改性，从而制备了近红外硅基材料。当双D-pi-A单菁结合在单晶硅材料表面上时，与硅材料相比，在900-1250 nm范围内有很强的表面光电压响应。为了研究双D-pi-A单菁对硅材料的光吸收特性的影响，分别研究了三种双D-pi-A单菁的吸收性能，单晶硅表面的薄膜以及表面光电压响应。调查。结果表明，表面光电压响应强度的顺序为Si / D3> Si / D2> Si / D1，并且没有改善近红外区域中硅材料的吸收性能，从而得到近红外硅基材料。

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