Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon

V. I. Grafutin; O. V. Ilyukhina; G. G. Myasishcheva; V. V. Kalugin; E. P. Prokopiev; S. P. Timoshenkov; N. O. Khmelevskii; Yu. V. Funtikov

首页> 外文期刊>Russian Microelectronics >Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon

【24h】

Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon

机译：正电子Ann没能谱研究硅中质子诱导的缺陷

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

General approaches are considered to the structural characterization of defects in solids by positron-annihilation spectroscopy. Positron annihilation is studied experimentally on proton-irradiated silicon wafers made to different specifications, using the angular distribution of annihilation photons. A parabolic and a Gaussian component are identified in the distribution curves. They are associated with the annihilation of Wheeler states in the bulk and near Si-ion cores, respectively. The densities of radiation-induced defects are deduced from the experimental data.

机译：考虑了通过正电子an没光谱法对固体中的缺陷进行结构表征的通用方法。利用an灭光子的角度分布，对质子辐照不同规格的硅片进行了正电子an没的实验研究。在分布曲线中确定了抛物线分量和高斯分量。它们分别与块状和近硅离子核中的惠勒状态的an灭有关。从实验数据推导出辐射引起的缺陷的密度。

著录项

来源
《Russian Microelectronics》 |2005年第3期|共6页
作者
V. I. Grafutin; O. V. Ilyukhina; G. G. Myasishcheva; V. V. Kalugin; E. P. Prokopiev; S. P. Timoshenkov; N. O. Khmelevskii; Yu. V. Funtikov;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词

相似文献

外文文献
中文文献
专利

1. Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon [J] . V. I. Grafutin, O. V. Ilyukhina, G. G. Myasishcheva, Russian Microelectronics . 2005,第3期

机译：正电子Ann没能谱研究硅中质子诱导的缺陷
2. Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon [J] . Heidi Nordmark, Ri Holmestad, John C. Walmsley, Journal of Applied Physics . 2009,第3期

机译：氢等离子体处理的多晶硅中扩展缺陷处氢缺陷形成的透射电镜研究
3. Transmission Electron Microscopy Study Of Hydrogen Defect Formation At Extended Defects In Hydrogen Plasma Treated Multicrystalline Silicon [J] . Heidi Nordmark, Randi Holmestad, John C. Walmsley, Journal of Applied Physics . 2009,第3期

机译：氢等离子体处理的多晶硅中扩展缺陷处氢缺陷形成的透射电镜研究
4. Electrical characterization of electron and proton-induced defects in p⁺n GaAs photodiodes: EBIC study [C] . Warner Jeffrey H., Maximenko Serguei I., Messenger Scott R., 35th IEEE Photovoltaic Specialists Conference . 2010

机译：p ^{+ n GaAs光电二极管中电子和质子诱导缺陷的电学表征：EBIC研究}
5. In situ transmission electron microscopy studies of dislocation/defect interactions in silicon germanium/silicon heterostructures. [D] . Stach, Eric Andrew. 1998

机译：硅锗/硅异质结构中位错/缺陷相互作用的原位透射电子显微镜研究。
6. Effects of Local Administration of Platelet Rich Plasma on Functional Recovery after Bridging Sciatic Nerve Defect Using Silicone Rubber Chamber; An Experimental Study [O] . Sedighe Abbasipour-Dalivand, Rahim Mohammadi, Vahid Mohammadi 2015

机译：局部施用富血小板血浆对硅橡胶腔室桥接坐骨神经缺损后功能恢复的影响；实验研究
7. Angular Effects in Proton-Induced Single-Event Upsets in Silicon-on-Sapphire and Silicon-on-Insulator Devices [O] . Reed, R. A., Gardner, G. A., Liu, M. S., 2004

机译：蓝宝石和绝缘体上硅质子引起的质子诱导的单事件扰动的角度效应
8. Angular Effects in Proton-Induced Single-Event Upsets in Silicon-on-Sapphire and Silicon-on-Insulator Devices [R] . Kniffin, S. D., Sanders, A. B., Reed, R. A., 2004

机译：在蓝宝石上硅和绝缘体上硅器件中质子引发的单事件扰动的角效应

Positron-Annihilation-Spectroscopy Study of Proton-Induced Defects in Silicon

摘要

著录项

相似文献

相关主题

期刊订阅