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GaAs as a passive Q-switch and Brewster plate for pulsed Yb:YAG laser

机译:GaAs作为无源Q开关和Brewster板,用于脉冲Yb:YAG激光器

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摘要

This study demonstrates a diode side-pumped Yb:YAG laser operated under free-run and passively GaAs Q-switched conditions. The maximal output energy was 10 mJ at a 25 Hz pulse repetition frequency (PRF) with a lms pump pulse duration when free-running condition. The GaAs wafer was used both as a passive Q-switch and a Brewster plate. Pumped by 175 mJ of 1 ms pulse duration at 941 nm, the laser outputted 13 pulses at 1.03 μm when under the Q-switched. The first pulse was 120 ns with a peak power of 83 W. Rate equations were calculated and the passive Q-switching theory was analyzed. The equations' numerical solutions were in good agreement with the experimental results.
机译:这项研究证明了在自由运行和无源GaAs调Q条件下工作的二极管侧面泵浦Yb:YAG激光器。自由运行条件下,最大输出能量在25 Hz脉冲重复频率(PRF)下为10 mJ,泵浦脉冲持续时间为lms。 GaAs晶片既用作无源Q开关又用作Brewster板。在941 nm处以175 mJ的1 ms脉冲持续时间泵浦,当在Q开关下时,激光器以1.03μm输出13个脉冲。第一个脉冲为120 ns,峰值功率为83W。计算了速率方程,并分析了无源Q开关理论。该方程的数值解与实验结果吻合良好。

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