High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime

D. Nodop; J. Limpert; R. Hohmuth; W. Richter; M. Guina; A. Tunnermann

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High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime

机译：工作于100ps以下脉冲状态的高脉冲能量被动调Q准单片微芯片激光器

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We present passively Q-switched microchip lasers with items bonded by spin-on-glass glue. PassiveQ-switching is obtained by a semiconductor saturable absorber mirror. The laser medium is a Nd:YVO_(4) crystal. These lasers generate pulse peak powers up to 20 kW at a pulse duration as short as 50 ps and pulse repetition rates of 166 kHz. At 1064 nm, a linear polarized transversal and longitudinal single-mode beam is emitted. To the best of our knowledge, these are the shortest pulses in the 1 (mu)J energy range ever obtained with passively Q-switched microchip lasers. The quasi-monolithic setup ensures stable and reliable performance.

机译：我们介绍了无源Q开关微芯片激光器，其产品通过旋涂玻璃胶粘合。通过半导体可饱和吸收镜获得无源Q开关。激光介质是Nd：YVO_（4）晶体。这些激光器以短至50 ps的脉冲持续时间和166 kHz的脉冲重复频率产生高达20 kW的脉冲峰值功率。在1064 nm处，发射线性偏振横向和纵向单模光束。据我们所知，这是无源调Q微芯片激光器所能获得的1μJ能量范围内最短的脉冲。准单片设置可确保性能稳定可靠。

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《Optics Letters》 |2007年第15期|共3页
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D. Nodop; J. Limpert; R. Hohmuth; W. Richter; M. Guina; A. Tunnermann;
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1. High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime [J] . D. Nodop, J. Limpert, R. Hohmuth, Optics Letters . 2007,第15期

机译：工作于100ps以下脉冲状态的高脉冲能量被动调Q准单片微芯片激光器
2. Single-longitudinal-mode-operated, passively Q-switched Nd:YAG/Cr4+:YAG microchip laser with > 100 kHz repetition rate and < 400 ps pulse width [J] . Applied optics . 2020,第13期

机译：单纵模操作，被动Q开关的Nd：YAG / CR4 +：YAG Microchip激光器，具有> 100 kHz重复率和<400 ps脉冲宽度
3. High-pulse-energy, passively Q-switched Yb-doped ﬁber laser with AlGaInAs quantum wells as a saturable absorber [J] . J. Y. Huang W. C. Huang W. Z. Zhuang K. W. Su Y. F. Chen* and K. F. Huang Optics Letters . 2009,第15期

机译：以AlGaInAs量子阱作为可饱和吸收体的高脉冲能量被动调Q掺Yb光纤激光器
4. Phase Locking of Nanosecond Pulses of Passively Q-switched Microchip Lasers [C] . Fanting Kong, Liping Liu, Shou-Huan Zhou, Conference on Lasers and Electro-Optics . 2008

机译：被动Q开关微芯片激光器的纳秒脉冲的相位锁定
5. Development of a passively Q-switched Nd:YAG microchip laser for use in the Satellite Laser Ranging 2000 project. [D] . Gompers, Samuel Leo. 2000

机译：开发了用于卫星激光测距2000项目的被动调Q开关Nd：YAG微芯片激光器。
6. High Energy Double Peak Pulse Laser Induced Plasma Spectroscopy for Metal Characterization Using a Passively Q-Switched Laser Source and CCD Detector [O] . Juri Agresti, Andrea Azelio Mencaglia, Salvatore Siano 2019

机译：高能双峰脉冲激光诱导等离子体光谱技术用于无源调Q激光源和CCD检测器的金属表征
7. Comparative Study of Thermal Lens Effect in End Pulsed-Pumped Ceramics and Single Crystal Yb3+ YAG- Cr4+ YAG Passively Q-switched Microchip Laser. [O] . Y. S. Nada, S. M. A. Maize 2016

机译：端部脉冲泵浦陶瓷和单晶YB3 + YAG-CR4 + YAG被动Q开关微芯片激光的热透镜效应的比较研究。
8. Mid- and High-Power Passively Q-Switched Microchip Lasers [R] . Zayhowski, J. J. , Dill, C. , Cook, C. , 1999

机译：中功率和高功率无源Q开关微芯片激光器

High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime

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