首页> 外文期刊>Optics Letters >Time-dependent scattering of a standing surface plasmon by rapid ionization in a semiconductor
【24h】

Time-dependent scattering of a standing surface plasmon by rapid ionization in a semiconductor

机译:半导体中快速电离引起的表面等离子体激元随时间的散射

获取原文
获取原文并翻译 | 示例
           

摘要

Scattering of a standing surface plasmon by rapid ionization in a semiconductor is investigated. We show that, for a standing plasmon, in contrast with a traveling plasmon, the scattering depends on the plasmon phase at the moment of ionization. By changing the moment of ionization, we can control the energy that is transferred into newly excited modes, which include a frequency-upshifted standing surface plasmon, transient outgoing radiation, and free-streaming currents with a static magnetic field in the semiconductor. The phenomena that are described open new possibilities for probing the dynamics of surface excitations in semiconductors on an ultrashort time scale.
机译:研究了通过快速电离在半导体中对立面等离子体激元的散射。我们表明,对于立式等离激元,与行进的等离激元相反,散射取决于电离时的等离激元相。通过改变电离的时刻,我们可以控制转移到新激发模式的能量,其中包括频率上升的驻极体等离子体激元,瞬态外向辐射以及半导体中具有静磁场的自由流动电流。所描述的现象为在超短时间内探测半导体中的表面激发动力学提供了新的可能性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号