Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality

Tran Quoc Tien; Martin Maiwald; Bernd Sumpf; Gotz Erbert; Gunther Trankle

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Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality

机译：670 nm的微外腔锥形激光器，具有5 W峰值功率和近衍射极限的光束质量

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Wavelength-stabilized compact laser systems at 670 nm on a micro-optical bench are presented. The resonator concept consists of a tapered semiconductor gain medium and a reflection Bragg grating as a wavelength selective resonator mirror. In pulse operation mode with 100 ns pulses, an optical peak power of 5 W with a spectral width below 150 pm was achieved. Nearly diffraction-limited beam quality at optical output powers up to 1 W is obtained. Such laser systems can be used, e.g., for Raman spectroscopy and as pumping sources for frequency conversion toward UV spectral range.

机译：介绍了在微光学平台上波长稳定的紧凑型激光系统，波长为670 nm。谐振器概念由锥形半导体增益介质和作为波长选择谐振器镜的反射布拉格光栅组成。在具有100 ns脉冲的脉冲操作模式下，获得了5 W的光学峰值功率，其光谱宽度低于150 pm。在高达1 W的光输出功率下，可获得接近衍射极限的光束质量。这样的激光系统可以用于例如拉曼光谱，并且可以用作泵浦源，用于朝着紫外光谱范围进行频率转换。

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《Optics Letters》 |2008年第22期|共3页
作者
Tran Quoc Tien; Martin Maiwald; Bernd Sumpf; Gotz Erbert; Gunther Trankle;
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中图分类光学;
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1. Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality [J] . Tran Quoc Tien* Martin Maiwald Bernd Sumpf Götz Erbert and Günther Tränkle Optics Letters . 2008,第22期

机译：670 nm的微外腔锥形激光器，具有5 W的峰值功率和近衍射极限的光束质量
2. Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality [J] . Pawel Adamiec* Bernd Sumpf Ingo Rüdiger Jörg Fricke Karl-Heinz Hasler Peter Ressel Hans WenzelMartin Zorn Götz Erbert and Günther Tränkle Optics Letters . 2009,第16期

机译：锥形激光器在650 nm处发射功率为1 W，光束质量接近衍射极限
3. Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality [J] . Pawel Adamiec, Bernd Sumpf, Ingo Rudiger, Optics Letters . 2009,第16期

机译：锥形激光器在650 nm处发射功率为1 W，几乎没有衍射极限的光束质量
4. 670 nm tapered lasers and amplifier with output powers P ges; 1 W and nearly diffraction limited beam quality [C] . B. Sumpf, G. Erbert, J. Fricke, Conference on Novel In-Plane Semiconductor Lasers . 2007

机译：具有输出功率P＆GES的670 nm锥形激光器和放大器; 1 W和几乎衍射限量光束质量
5. Fabrication of high-power diffraction-limited semiconductor tapered lasers and amplifiers. [D] . Cho, Si Hyung. 1998

机译：高功率衍射受限的半导体锥形激光器和放大器的制造。
6. Highly flexible fiber delivery of a high peak power nanosecond Nd:YAG laser beam for flexiscopic applications [O] . Hamed Abbasi, Ferda Canbaz, Raphael Guzman, 2021

机译：高峰值功率纳秒Nd：YAG激光束的高度灵活纤维输送用于柔性应用
7. 808 nm tapered diode lasers optimized for high output power and nearly diffraction-limited beam quality in pulse mode operation [O] . Jensen Ole Bjarlin, Klehr A., Dittmar F., 2007

机译：808 nm锥形二极管激光器针对脉冲模式操作中的高输出功率和接近衍射限制的光束质量进行了优化
8. High-Power, Diffraction-Limited, Narrow-Band, External-Cavity Diode Laser [R] . Sharfin, W. F., Seppala, J. P., Mooradian, A., 1989

机译：高功率，衍射限制，窄带，外腔二极管激光器

Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality

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