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首页> 外文期刊>CERAMICS INTERNATIONAL >High stable dielectric permittivity and low dielectric loss in sol-gel derived BiFeO_3 thin films
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High stable dielectric permittivity and low dielectric loss in sol-gel derived BiFeO_3 thin films

机译：溶胶-凝胶法制备的BiFeO_3薄膜具有高稳定的介电常数和低的介电损耗

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摘要

BiFeO_3 (BFO) thin films were prepared on (111 )Pt/Ti/SiO_2/Si substrates via a sol-gel spin-coating method, and the influence of the annealing temperatures on the phase formation, the microstructure and the electrical properties was systematically studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and an HP 4294A precision impedance analyser and a ferroelectric material test system, respectively. The XRD analysis revealed the films to be well-crystallised, and those annealed at approximately 700 °C were well-formed in the perovskite phase. The SEM images confirmed that the BFO films had a uniform and dense microstructure with an average thickness of 300 nm. As the frequency increased to 1 MHz, the dielectric constant of the BFO films remained stable and exhibited only a slight decrease. The film annealed at 715 °C exhibited the best dielectric properties with a high dielectric permittivity (ε_r= 194 at 100 kHz) and a low dielectric loss (tanδ=0.02 at 100 kHz). The leakage current density of the BFO thin films was also notably low, i.e., 10~6 A/cm~2, under an applied electric field of 200 kV/cm for the film annealed at 715 ℃. The excellent electrical properties obtained in the sol-gel-derived BFO films are attributed to the improved phase purity and microstructure.
机译：通过溶胶-凝胶旋涂法在（111）Pt / Ti / SiO_2 / Si衬底上制备了BiFeO_3（BFO）薄膜，系统地研究了退火温度对相形成，微观结构和电性能的影响。分别由X射线衍射（XRD），扫描电子显微镜（SEM）和HP 4294A精密阻抗分析仪和铁电材料测试系统进行了研究。 XRD分析表明该膜结晶良好，并且在约700℃退火的那些膜在钙钛矿相中形成良好。 SEM图像证实了BFO膜具有均匀且致密的微观结构，平均厚度为300nm。当频率增加到1 MHz时，BFO膜的介电常数保持稳定，并且仅出现轻微下降。在715°C退火的薄膜表现出最佳的介电性能，具有高介电常数（在100 kHz下ε_r= 194）和低介电损耗（在100 kHz下tanδ= 0.02）。对于在715℃退火的薄膜，在200kV / cm的施加电场下，BFO薄膜的漏电流密度也很低，即10〜6A / cm〜2。在溶胶-凝胶衍生的BFO薄膜中获得的优异电性能归因于相纯度和微观结构的改善。

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