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Fast optical recording media based on semiconductor nanostructures for image recording and processing

机译:基于半导体纳米结构的快速光学记录介质,用于图像记录和处理

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摘要

Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10(6) cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10(-2)V/cm(2), and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.
机译:基于半导体纳米结构(CdTe,GaAs)的快速光学记录介质,用于图像记录和处理,速度达到10(6)个周期/秒(超过了基于金属-绝缘体-半导体-(液晶)的已知记录介质的速度(MIS-LC)结构的2到3个数量级),10(-2)V / cm(2)的光敏性和5-10(线对)/ mm的空间分辨率得到了发展。描述了作为快速光学记录介质的纳米结构的操作原理以及用于读取记录在这种介质中的图像的方法。实现了基于CdTe晶体纳米结构的非相干光记录图像的快速光学处理器。显示了它们在制造图像相关器中的应用可能性。

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