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首页> 外文期刊>Semiconductors >Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers
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Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers

机译：通过轻掺杂硅晶体晶片的金属辅助化学刻蚀产生的纳米线结构的光学特性

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摘要

Layers of Si nanowires produced by the metal-assisted chemical etching of (100)-oriented single-crystal p-Si wafers with a resistivity of 1-20 Omega center dot cm are studied by reflectance spectroscopy, Raman spectros-copy, and photoluminescence measurements. The nanowire diameters are 20-200 nm. The wafers are supplied by three manufacturing companies and distinguished by their different lifetimes of photoexcited charge carriers. It is established that the Raman intensity for nanowires longer than 1 mu m is 3-5 times higher than that for the substrates. The interband photoluminescence intensity of nanowires at the wavelength 1.12 mu m is substantially higher than that of the substrates and reaches a maximum for samples with the longest bulk lifetime, suggesting a low nonradiative recombination rate at the nanowire surfaces.
机译：通过反射光谱，拉曼光谱和光致发光测量研究了电阻率为1-20Ω中心点cm的（100）取向单晶p-Si晶片的金属辅助化学刻蚀产生的Si纳米线的层。 。纳米线直径为20-200nm。晶圆由三家制造公司提供，并以其光激发电荷载流子的不同寿命而著称。可以确定，长于1微米的纳米线的拉曼强度是衬底的3-5倍。波长为1.12μm的纳米线的带间光致发光强度显着高于基板的带间光致发光强度，并且对于具有最长本体寿命的样品达到最大值，这表明纳米线表面的非辐射复合率较低。

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