Isotype Surface-Barrier n-TiN-Si Heterostructure

M. N. Solovan; V. V. Brus; P. D. Maryanchuk

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Isotype Surface-Barrier n-TiN-Si Heterostructure

机译：同型表面势垒n-TiN / n-Si异质结构

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n-TiN-Si heterostructures are prepared by reactive magnetron sputtering. The current–voltage characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and the series resistance of the heterojunction are analyzed. The energy-band diagram for the heterojunctions under study is constructed. The concentration of heterojunction surface states is estimated to be 2.67 × 10~(13) cm~(–2). It is established that the dominant mechanisms of current transport through forward- and reverse-biased n-TiN-Si heterojunctions are described well within the tunnel and emission models.

机译：通过反应磁控溅射制备n-TiN / n-Si异质结构。异质结构的电流-电压特性是在不同温度下测量的。分析了势垒高度和异质结串联电阻的温度依赖性。构造了正在研究的异质结的能带图。异质结表面态的浓度估计为2.67×10〜（13）cm〜（–2）。已确定在隧道和发射模型中很好地描述了通过正向和反向偏置的n-TiN / n-Si异质结传输电流的主要机制。

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《Semiconductors》 |2014年第2期|共5页
作者
M. N. Solovan; V. V. Brus; P. D. Maryanchuk;
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正文语种 eng
中图分类半导体物理学;
关键词
heterojunctions; described; emission;

机译：异质结;描述;发射;

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专利

1. Isotype Surface-Barrier n-TiN-Si Heterostructure [J] . M. N. Solovan, V. V. Brus, P. D. Maryanchuk Semiconductors . 2014,第2期

机译：同型表面势垒n-TiN / n-Si异质结构
2. Texturized interface as a basis of surface-barrier heterostructure for solar cells application [J] . Dmitruk NL., Mamontova IB., Mamykin SV., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2000,第4期

机译：纹理化界面作为太阳能电池应用中表面屏障异质结构的基础
3. MoS_2|ZnO isotype heterostructure diode: Carrier transport and band alignment [J] . Shikha Srivastava, Yashowanta N. Mohapatra Journal of Applied Physics . 2021,第20期

机译：MOS_2 | ZnO同型异质结构二极管：载波运输和带对准
4. Effect of microwave radiation on the physicochemical properties of some semiconductor materials (GaAs, GaP, InP) and heterostructures, as well as on the parameters of surface-barrier diode structures [C] . Belyaev, A.A., Belyaev, . 1999

机译：微波辐射对某些半导体材料（GaAs，GaP，InP）和异质结构的物理化学性质以及表面势垒二极管结构参数的影响
5. Vertical Unipolar Transport through Isotype III-Nitride Heterostructures by Molecular Beam Epitaxy [D] . Fireman, Micha N. 2016

机译：通过分子束外延通过同型III-氮化物异质结构的垂直单极传输。
6. Enhanced Dielectric Environment Sensitivity of Surface Plasmon-Polariton in the Surface-Barrier Heterostructures Based on Corrugated Thin Metal Films with Quasi-Anticorrelated Interfaces [O] . Alexander V. Korovin, Nicolas L. Dmitruk, Sergii V. Mamykin, 2017

机译：基于具有拟反相关界面的波纹金属薄膜的表面势垒异质结构中表面等离子-极化子的介电环境敏感性增强
7. Enhanced Dielectric Environment Sensitivity of Surface Plasmon-Polariton in the Surface-Barrier Heterostructures Based on Corrugated Thin Metal Films with Quasi-Anticorrelated Interfaces [O] . Alexander V. Korovin, Nicolas L. Dmitruk, Sergii V. Mamykin, 2017

机译：基于具有拟反相关界面的波纹金属薄膜的表面势垒异质结构中表面等离子-极化子的介电环境敏感性增强
8. Dual silicon surface-barrier detectors and associated electronics for monitoring chemical separation of (249)Cf and (249)Bk [R] . Chiles, M. M. 1990

机译：双硅表面势垒探测器和相关电子设备，用于监测（249）Cf和（249）Bk的化学分离

Isotype Surface-Barrier n-TiN-Si Heterostructure

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