Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

Sevastyanov M.G.; Lobkov V.S.; Shmelev A.G.; Leontev A.V.; Matuhin V.L.; Bobyl A.V.; Terukov E.I.; Kukin A.V.

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Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

机译：飞秒光谱研究氢化非晶硅薄膜的电子性能

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Experimental results on the electron relaxation time and diffusion coefficient in hydrogenated amorphous silicon films that exhibit intrinsic and electronic conductivity at room temperature are reported. It is found that, for these two types of films, the relaxation times are 1 ns and 465 ps and the diffusion coefficients are 0.54 and 0.83 cm~2 s~(-1). It is established that, as the pulse intensity is increased, the decay time of the induced-grating signal shortens.

机译：报道了在室温下具有本征和电子导电性的氢化非晶硅膜中电子弛豫时间和扩散系数的实验结果。发现，对于这两种类型的膜，弛豫时间分别为1 ns和465 ps，扩散系数分别为0.54和0.83 cm〜2 s〜（-1）。已经确定，随着脉冲强度的增加，感应光栅信号的衰减时间缩短。

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《Semiconductors》 |2013年第10期|共4页
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Sevastyanov M.G.; Lobkov V.S.; Shmelev A.G.; Leontev A.V.; Matuhin V.L.; Bobyl A.V.; Terukov E.I.; Kukin A.V.;
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正文语种 eng
中图分类半导体物理学;
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diffusion coefficient; exhibit intrinsic; relaxation times;

机译：扩散系数;展示本征;松弛时间;

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1. Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy [J] . Sevastyanov M.G., Lobkov V.S., Shmelev A.G., Semiconductors . 2013,第10期

机译：飞秒光谱研究氢化非晶硅薄膜的电子性能
2. Anisotropy of Optical, Electrical, and Photoelectrical Properties of Amorphous Hydrogenated Silicon Films Modified by Femtosecond [J] . Amasev D. V., Khenkin M. V., Drevinskas R., Technical physics . 2017,第6期

机译：由飞秒修饰的无定形氢化硅膜的光学，电气和光电性能的各向异性
3. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, photoelectric properties [J] . Emelyanov A.V., Kazanskii A.G., Kashkarov P.K., Semiconductors . 2012,第6期

机译：飞秒激光处理氢化非晶硅薄膜对其结构，光学和光电性能的影响
4. Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films [C] . Andrey V. Emelyanov, Mark V. Khenkin, Andrey G. Kazanskii, Conference on photonics for solar energy systems IV . 2012

机译：飞秒激光暴露的氢化非晶硅膜的结构和电神理性质
5. Proton NMR studies of PECVD hydrogenated amorphous silicon films and HWCVD hydrogenated amorphous silicon films. [D] . Herberg, Julie Lynn. 2002

机译：PECVD氢化非晶硅膜和HWCVD氢化非晶硅膜的质子NMR研究。
6. Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process [O] . Israel Vivaldo, Roberto C. Ambrosio, Roberto López, 2020

机译：通过快速热退火工艺增强氢化非晶碳化硅薄膜的光致发光
7. The effects of native and light induced defects in the optical and electronic properties of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy thin films [O] . Dönertaş Yavaş Medine Elif 2005

机译：自然和光致缺陷对氢化非晶硅锗（a-SiGe：H）合金薄膜的光学和电子性能的影响
8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

机译：添加到阅览室阅读软件下载与<<辉光放电分解制备离子镀和氢化非晶硼薄膜制备氢化非晶硅薄膜及其表征>>相似的文献。最终报告，1980年4月1日至1981年5月31日

Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

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