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首页> 外文期刊>SID International Symposium: Digest of Technology Papers >P-181: Device Parameters Determination by Numerical Model Fitting for Organic Light-Emitting Diodes (OLEDs) using Impedance Spectroscopy Measurement
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P-181: Device Parameters Determination by Numerical Model Fitting for Organic Light-Emitting Diodes (OLEDs) using Impedance Spectroscopy Measurement

机译：P-181：使用阻抗谱测量通过数值模型拟合确定有机发光二极管（OLED）的设备参数

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摘要

We have developed a numerical fitting methodology which enables the determination of device parameters for OLEDs from impedance spectroscopy (IS) measurement, temperature dependence measurement and dark injection space charge limited current (DI-SCLC) measurements. In our method, carrier mobility is estimated from DI-SCLC, density of state (DOS) and interface state density are obtained from model fitting of real/imaginary part of capacitance measured by IS, barrier height of interface is estimated by modified Schottky model fitting of temperature dependence current-voltage (I-V) measurements. Using this approach we have determined barrier heights, DOS, interface state densities, carrier mobilities and Richardson factors for each interface and layer in OLED devices. In case of the ITO/NPD interface, barrier height, DOS, interface state density and ent methods for extraction of device parameters such as carrier mobility, density of state (DOS), barrier height. In these methodologies impedance spectroscopy (IS) is a useful tool for evaluating relaxation, transport and injection in various organic devices. Usually IS measurements allow the determination of equivalent circuits, DOS and carrier mobility of the organic semiconductor layers. In order to determine the carrier injection behaviour, we propose a numerical model and model fitting method included interface state density (D_(it)) for IS measurement results of hole-only devices (HOD) and electron-only devices (EOD). Therefore, a recombination model is also proposed for the negative capacitance behaviour of OLEDs. Naito et. al. have also proposed a numerical model included DOS of organic semiconductor for OLEDs. We obtain DOS from Naito's model and D_(it) from our model. D_(it) is expected to be a key parameter of the device degradation mechanism.
机译：我们已经开发了一种数值拟合方法，可以通过阻抗光谱（IS）测量，温度相关性测量和暗注入空间电荷限制电流（DI-SCLC）测量来确定OLED的设备参数。在我们的方法中，通过DI-SCLC估算载流子迁移率，通过IS测量的电容的实部/虚部的模型拟合获得状态密度（DOS）和界面状态密度，通过改进的Schottky模型拟合估算界面的势垒高度温度相关电流-电压（IV）测量使用这种方法，我们已经确定了OLED设备中每个接口和层的势垒高度，DOS，接口状态密度，载流子迁移率和Richardson因素。对于ITO / NPD接口，势垒高度，DOS，接口状态密度和用于提取设备参数（例如载流子迁移率，状态密度（DOS），势垒高度）的输入法。在这些方法中，阻抗谱（IS）是评估各种有机设备中弛豫，传输和注入的有用工具。通常，IS测量可以确定等效电路，DOS和有机半导体层的载流子迁移率。为了确定载流子注入行为，我们提出了一种数值模型和模型拟合方法，其中包括用于纯空穴器件（HOD）和纯电子器件（EOD）的IS测量结果的界面状态密度（D_（it））。因此，还针对OLED的负电容行为提出了重组模型。内藤等等还提出了包括用于OLED的有机半导体DOS的数值模型。我们从Naito模型获得DOS，从模型获得D_（it）。 D_（it）有望成为设备降级机制的关键参数。

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