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首页> 外文期刊>Smart Materials & Structures >Surface-energy-induced selective growth of (001) grains in magnetostrictive ternary FeGa-based alloys
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Surface-energy-induced selective growth of (001) grains in magnetostrictive ternary FeGa-based alloys

机译：表面能量诱导的磁致伸缩三元FeGa基合金中（001）晶粒的选择性生长

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Surface-energy-induced selective grain growth has been used to increase the presence of preferred planes in polycrystalline ternary FeGa based alloys and thereby maximize the magnetostrictive performance of these alloys. In this study, alloys were either doped with elemental sulfur or annealed under sulfur atmospheres to control the sulfur concentration on the surface of samples during annealing. We show that the segregation of sulfur, which is known to play an important role in controlling surface energy, can be correlated to the selective growth of {001} grains and an increase in the saturation magnetostriction of the samples. The results show that sulfur atoms are adsorbed (diffused) from the sulfur atmosphere (bulk interior) and segregate on the sample surface. The correlation between surface chemistry, texture development and magnetostriction is presented. The formation of {001} grains occurred under slight surface segregation of sulfur, i.e.at levels of concentration of surface sulfur between 0.5 and 1.35at.%, for alloys of (Fe _(0.813)Ga _(0.187)) _(99)B _1 and (Fe _(0.813)Ga _(0.187)) _(99.5)B _(0.5) doped with 50ppm S. In the case of (Fe _(0.81)Ga _(0.19)) _(99)(NbC) _1 alloy annealed under a H 2S atmosphere, abnormal growth of (001) grains resulted in 88.3% of the sample area being covered with a (001) grain.
机译：表面能诱导的选择性晶粒生长已用于增加多晶三元FeGa基合金中优选平面的存在，从而使这些合金的磁致伸缩性能最大化。在这项研究中，合金要么掺杂元素硫，要么在硫气氛下退火，以控制退火过程中样品表面的硫浓度。我们表明，已知在控制表面能中起重要作用的硫的偏析可以与{001}晶粒的选择性生长和样品的饱和磁致伸缩的增加相关。结果表明，硫原子从硫气氛（本体内部）中吸附（扩散）并偏析在样品表面上。介绍了表面化学，织构发展和磁致伸缩之间的相关性。对于（Fe _（0.813）Ga _（0.187））_（99）的合金，{001}晶粒的形成发生在轻微的硫表面偏析下，即表面硫的浓度水平在0.5和1.35at。％之间。 B _1和（Fe _（0.813）Ga _（0.187））_（99.5）B _（0.5）掺杂了50ppm S.在（Fe _（0.81）Ga _（0.19））_（99）（在H 2S气氛下退火的NbC）_1合金，（001）晶粒的异常生长导致样品区域的88.3％被（001）晶粒覆盖。

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