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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Enhancement of optical absorption in Ga-chalcopyrite-based intermediate-band materials for high efficiency solar cells
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Enhancement of optical absorption in Ga-chalcopyrite-based intermediate-band materials for high efficiency solar cells

机译：用于高效太阳能电池的基于Ga黄铜矿的中带材料的光吸收增强

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摘要

We present absorption properties enhancement for two CuGaS _2-based intermediate-band materials, as promising compounds for high efficiency, lower-cost photovoltaic devices. Previous band diagrams calculations predicted that these materials present a partially filled localized band within the band gap of the host semiconductor, which would increase the absorption of low-energy photons, creating additional electronhole pairs respect to a conventional semiconductor. This could ideally result in an increase of the photocurrent of the cell without the fall of the open-circuit voltage. In this paper we show, using density functional methods, the effect of this intermediate band on the optical properties of the derived alloys. We highlight the significant enhancement of the absorption coefficient observed in the most intense range of the solar emission and we study the reflectance and transmittance properties of the materials in order to understand the effect of the thickness of the sample on the optical properties. We compare two different substituents of the Ga atoms in CuGaS_2, namely, Ti and Cr atoms, able to form the intermediate-band material, and their interest for photovoltaic applications.
机译：我们提出了两种基于CuGaS _2的中带材料的吸收性能增强，这是用于高效，低成本光伏器件的有前途的化合物。先前的能带图计算预测，这些材料会在主体半导体的带隙内呈现部分填充的局部能带，这将增加低能光子的吸收，从而产生相对于常规半导体的额外电子空穴对。理想地，这可以导致在不降低开路电压的情况下增加电池的光电流。在本文中，我们使用密度泛函方法显示了该中间谱带对衍生合金的光学性能的影响。我们强调了在最强烈的太阳辐射范围内观察到的吸收系数的显着提高，并且我们研究了材料的反射率和透射率特性，以便了解样品厚度对光学特性的影响。我们比较了CuGaS_2中Ga原子的两个不同的取代基，即Ti和Cr原子，它们能够形成中间带材料，以及它们对光伏应用的兴趣。

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