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首页> 外文期刊>Synthetic Metals >PMMA-based patternable gate insulators for organic thin-film transistors
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PMMA-based patternable gate insulators for organic thin-film transistors

机译：用于有机薄膜晶体管的基于PMMA的可图案化栅极绝缘体

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摘要

In order to prepare patternable polymer gate insulators, two methods of photo-crosslinking the polymer insulator were investigated. In the first method, poly(methyl methacrylate-co-2-hydroxyethyl methacrylate) [poly(MMA-co-HEMA)] functionalized with cinnamate groups was synthesized and photo-crosslinked. In the second method, a semi-interpenetrating PMMA network was prepared using a 25 wt percent solution of PMMA/dipentaerythritol hexa-acrylate(DPEHA)/diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide (TPO) by photo-crosslinking. Both of the photo-crosslinked insulator layers showed a high pattern resolution, indicating that physically and chemically stable crosslinking was accomplished. The field-effect mobilities of the pentacene-based OTFTs fabricated with the functionalized poly(MMA-co-HEMA) (60/40) and PMMA/DPEHA as gate insulators were 0.98 and 0.71 cm~2/Vs, respectively. It was found that patternable polymer gate insulators having good electrical properties could be prepared by using the functionalized poly(MMA-co-HEMA)and the PMMA/DPEHA solution.
机译：为了制备可构图的聚合物栅绝缘体，研究了两种使聚合物绝缘体光交联的方法。在第一种方法中，合成了用肉桂酸酯基官能化的聚（甲基丙烯酸甲酯-co-2-甲基丙烯酸羟乙酯）[poly（MMA-co-HEMA）]并进行了光交联。在第二种方法中，使用PMMA /二季戊四醇六丙烯酸酯（DPEHA）/二苯基（2,4,6-三甲基苯甲酰基）氧化膦（TPO）的25 wt％溶液制备半互穿的PMMA网络。两个光交联的绝缘体层均显示出高的图案分辨率，表明完成了物理和化学稳定的交联。以功能化聚（MMA-co-HEMA）（60/40）和PMMA / DPEHA作为栅绝缘体制备的并五苯基OTFT的场效应迁移率分别为0.98和0.71 cm〜2 / Vs。发现通过使用官能化的聚（MMA-co-HEMA）和PMMA / DPEHA溶液可以制备具有良好电性能的可构图的聚合物栅绝缘体。

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