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首页> 外文期刊>Synthetic Metals >Photovoltaic properties of a single layer poly (3 - (4-octylphenyl) -2,2'-bithiophene) (PTOPT)
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Photovoltaic properties of a single layer poly (3 - (4-octylphenyl) -2,2'-bithiophene) (PTOPT)

机译：单层聚（3-（4-辛基苯基）-2,2'-联噻吩）（PTOPT）的光伏性能

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摘要

A Schottky contact is made from a single layer polymer poly (3-(4-octylphenyl)-2,2'-bithiophene) (PTOPT) in its neutral state and a low work function metal (Al). The electrical and optical properties have been investigated by means of I-V measurements in the dark and under illumination. Various parameters such as the reverse saturation current density, barrier height, and diode quality factor were determined from the I-V curves in the dark of Al/PTOPT/ITO sandwich structure using thermionic emission theory. Spectral response of the device was measured at various wavelengths giving a peak at 500 nm. The IPCE percent was obtained for illumination through both the Al and ITO sides. By illuminating the diode with a monochromatic light of wavelength 500 nm, the open-circuit voltage, short-circuit current density, power conversion efficiency, and fill-factor (FF) were obtained. The dependence of photocurrent on light intensity was also recorded and analyzed.
机译：肖特基接触是由处于中性状态的单层聚合物聚（3-（4-辛基苯基）-2,2'-联噻吩）（PTOPT）和低功函金属（Al）制成的。已经通过在黑暗和光照下的I-V测量研究了电学和光学性质。利用热电子发射理论，在黑暗的Al / PTOPT / ITO夹层结构中，通过I-V曲线确定了各种参数，例如反向饱和电流密度，势垒高度和二极管品质因数。在各种波长下测量器件的光谱响应，从而在500 nm处出现峰值。通过铝和ITO侧面的照明获得了IPCE百分比。通过用波长为500 nm的单色光照射二极管，可以获得开路电压，短路电流密度，功率转换效率和填充系数（FF）。还记录和分析了光电流对光强度的依赖性。

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