TEM study of electron beam-induced crystallization of amorphous GeSi films

Z. W. Xu; A. H. W. Ngan

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TEM study of electron beam-induced crystallization of amorphous GeSi films

机译：电子束诱导非晶GeSi薄膜结晶的TEM研究

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Electron beam-induced crystallization of GeSi amorphous films with two different compositions, Ge_(0.7)Si_(0.3) and Ge_(0.1)Si_(0.9). has been studied. The phase changes were examined by electron diffraction, high-resolution transmission electron microscopy and electron-diffraction simulation by the fast Fourier transformation method. A hexagonal structure induced by the electron irradiation was found in the Ge_(0.7)Si_(0.3) film. In the Ge_(0.1)Si_(0.9) film, diamond cubic (dc) crystals and non-dc phases were formed by irradiation with low-density electron beams and high-density electron beams respectively.

机译：电子束诱导的具有两种不同成分Ge_（0.7）Si_（0.3）和Ge_（0.1）Si_（0.9）的GeSi非晶膜的结晶。已经研究过。通过电子衍射，高分辨率透射电子显微镜和通过快速傅里叶变换法进行的电子衍射模拟来检查相变。在Ge_（0.7）Si_（0.3）膜中发现了由电子辐照引起的六边形结构。在Ge_（0.1）Si_（0.9）膜中，分别通过低密度电子束和高密度电子束的照射形成金刚石立方（dc）晶体和非dc相。

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《Philosophical Magazine Letters》 |2004年第11期|共10页
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Z. W. Xu; A. H. W. Ngan;
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TEM study of electron beam-induced crystallization of amorphous GeSi films

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