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首页> 外文期刊>Philosophical Magazine Letters >The effects of sulphur incorporation on the optoelectronic properties of hydrogenated amorphous germanium
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The effects of sulphur incorporation on the optoelectronic properties of hydrogenated amorphous germanium

机译：掺硫对氢化非晶锗光电性能的影响

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Hydrogenated amorphous germanium-sulphur (a-Gi -,VSX:H) alloys have been prepared by the glow-discharge technique from mixtures of hydrogen, germane and sulphur hexafluoride gases. The sulphur content of the films prepared at the powered and the unpowered electrodes varied between 2 and 30 at.%. Addition of sulphur decreases the activation energy of the conductivity from a typical value of 0-5 eV for hydrogenated amorphous germanium (a-Ge: H) to minima of 0-14 and 0-28 eV for the alloys deposited on the unpowered electrode and powered electrode respectively. Concurrent with this, for the cathode-deposited films, the tixz product of electrons is increased by one order of magnitude to a maximum of 2 X 10 -6 cm2 V-1, and the ambipolar diffusion length decreases from 470 to 350 A. From these trends, and with a consideration of various additional experimental findings, it is inferred that n-type doping occurs when sulphur is added to a-Ge:H. Sulphur incorporation improves the quality of films prepared at the unpowered electrode as is evident from the optoelectronic properties; the r]ix product increases by more than three orders of magnitude to 10-6cm2V-1, whereas the ambipolar diffusion length is nearly constant at around 400 A.
机译：氢化非晶态锗-硫（a-Gi-，VSX：H）合金是通过辉光放电技术从氢，锗烷和六氟化硫气体的混合物中制备的。在带电和不带电的电极上制备的薄膜的硫含量在2至30 at。％之间变化。硫的添加将电导率的活化能从氢化非晶锗（a-Ge：H）的典型值0-5 eV降低到沉积在无电电极上的合金的最小值0-14和0-28 eV。电源电极。同时，对于阴极沉积膜，电子的t ixz乘积增加一个数量级，最大为2 X 10 -6 cm2 V-1，并且双极扩散长度从470减小至350 A从这些趋势，并考虑到各种其他实验发现，可以推断出，当将硫添加到α-Ge：H中时，会发生n型掺杂。从光电性能可以明显看出，硫的掺入可以改善在无电电极上制备的薄膜的质量。 rix乘积增加了三个数量级以上，达到10-6cm2V-1，而双极性扩散长度几乎恒定在400 A左右。

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