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首页> 外文期刊>Philosophical Magazine Letters >Transmission electron microscopy study of defects in a directionally grown Al-Cu-Co-Ge single quasicrystal
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Transmission electron microscopy study of defects in a directionally grown Al-Cu-Co-Ge single quasicrystal

机译：定向生长Al-Cu-Co-Ge单准晶体中缺陷的透射电镜研究

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Large single decagonal quasicrystals of Al-Cu-Co-Ge alloy about 0-8 mm in diameter and 10 mm in length have been obtained by the directional growth technique. The single decagonal quasicrystals show decaprismatic morphology and their perfection was examined by electron diffraction. It was found that the perfection of these single quasicrystals depends on the growth rate during the directional solidification. A high density of mixed dislocations with Burgers vectors b parallel to the tenfold axis and stacking faults with displacement vectors R parallel to the tenfold axis were introduced into the quasicrystals during rapid directional growth. The effects of the temperature gradient and rate of growth on the defect formation during directional growth are discussed.
机译：通过定向生长技术已经获得了直径约0-8mm，长度约10mm的Al-Cu-Co-Ge合金的大单十边形准晶体。单个十边形准晶体显示出癸癸形态，并通过电子衍射检查了其完善性。已经发现，这些单个准晶体的完善性取决于定向凝固过程中的生长速率。在快速定向生长期间，具有平行于十倍轴的Burgers向量b的高密度混合位错和具有平行于十倍轴的位移向量R的堆积断层被引入准晶体中。讨论了温度梯度和生长速率对定向生长过程中缺陷形成的影响。

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