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首页> 外文期刊>Philosophical Magazine Letters >Transmission electron microscopy analysis of planar and line defects in an AI-Li-Cu icosahedral quasicrystal
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Transmission electron microscopy analysis of planar and line defects in an AI-Li-Cu icosahedral quasicrystal

机译：铝-锂-铜二十面体准晶体中平面和线缺陷的透射电子显微镜分析

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摘要

Transmission electron microscopy observations of as-cast samples of an Al-Li-Cu icosahedral quasicrystal allowed us to demonstrate planar and line defects. By means of dark-field and weak-beam imaging techniques, planar defects were tentatively identified as rc-type boundaries and low-angle subgrain boundaries, while line defects were found to be isolated dislocations. All the characteristics of the defects were determined by conducting extensive tilting experiments and performing conventional extinction contrast analyses. In particular, the isolated dislocations were found to have a Burgers vector aligned along a fivefold symmetry axis in physical space and to be screw in character.
机译：Al-Li-Cu二十面体准晶体的铸态样品的透射电子显微镜观察使我们能够证明平面和线缺陷。通过暗场和弱束成像技术，平面缺陷被初步确定为rc型边界和低角度亚晶界，而线缺陷则被发现是孤立的位错。通过进行广泛的倾斜实验并进行常规的消光对比分析来确定缺陷的所有特征。特别地，发现孤立的位错具有在物理空间中沿五重对称轴对齐的Burgers向量，并且具有螺旋特征。

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