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首页> 外文期刊>Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties >Effect of Cr and Si additions on the continuous-cooling-transformation kinetics of gamma-based Ti-45 at.% Al alloy
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Effect of Cr and Si additions on the continuous-cooling-transformation kinetics of gamma-based Ti-45 at.% Al alloy

机译：Cr和Si的添加对γ-基Ti-45at。％铝合金连续冷却转变动力学的影响

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The effect of Cr and Si additions on the continuous-cooling-transformation (CCT) kinetics of Ti45Al alloy has been studied at cooling rates from about 0.5 to 500 degreesC s(-1) using our recently constructed in-situ real-time resistivity-temperature measurement apparatus. The alpha --> gamma (L) lamellar reaction occurs at slow cooling rates and only the alpha --> alpha (2) ordering reaction occurs at fast cooling rates; no massive reaction occurs at intermediate cooling rates. The addition of Cr results in a simple decrease in the reaction temperatures for the alpha --> gammaL lamellar reaction without a change in the critical cooling rate for the ordering reaction only, in partial agreement with the depression of the alpha transus temperature. The ordering start temperature was measured to be slightly higher. The addition of Si, on the other hand, significantly accelerates the kinetics of alpha-->gamma (L) lamellar reaction by shifting its CCT curve towards a higher temperature and a shorter time. This is because silicides formed at high temperatures on grain boundaries raise the gamma -phase nucleation temperature and also because Si enhances its growth rate, probably by increasing the chemical diffusivity of alpha phase. The addition of Cr to a Si-containing Ti-45 at.% Al alloy significantly refines its lamellar spacing either by suppressing the Si segregation to grain boundaries or by reducing the alpha-gamma interfacial energy. The antiphase domain size in the alpha (2) phase is distinctively small in the Si-containing alloy probably owing to its interfacial segregation tendency. [References: 26]
机译：Cr和Si的添加对Ti45Al合金的连续冷却转变（CCT）动力学的影响已使用我们最近构造的实时电阻率在0.5至500℃s（-1）的冷却速率下进行了研究。温度测量装置。 α->γ（L）层状反应在缓慢的冷却速率下发生，只有α-> alpha（2）的有序反应在快速的冷却速率下发生;在中间冷却速率下不会发生大量反应。 Cr的添加导致α→γ层状反应的反应温度的简单降低，而仅对于有序反应的临界冷却速率没有改变，仅与α转变温度的降低部分一致。测量的订购开始温度略高。另一方面，Si的加入会通过将其CCT曲线移向更高的温度和更短的时间来显着加速α->γ（L）层状反应的动力学。这是因为在高温下在晶界上形成的硅化物会提高γ相成核温度，并且因为Si可能会通过增加α相的化学扩散性来提高其生长速率。通过抑制Si偏析到晶界或减少α-γ界面能，将Cr添加到含Si的Ti-45％Al合金中可显着改善其层状间距。在含硅合金中，α（2）相的反相畴尺寸明显较小，这可能是由于其界面偏析趋势所致。 [参考：26]

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