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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Thermal equilibrium, the Staebler-Wronski effect and potential fluctuations in lithium-doped hydrogenated amorphous silicon
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Thermal equilibrium, the Staebler-Wronski effect and potential fluctuations in lithium-doped hydrogenated amorphous silicon

机译：锂掺杂氢化非晶硅的热平衡，Staebler-Wronski效应和电势波动

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We report the effect of fast thermal quenching (FQ) and light soaking (LS) on electronic transport in lithium-doped hydrogenated amorphous silicon (a-Si:H(Li)), and compare the two instabilities in the same specimen. We find that the metastable changes are qualitatively similar to those in phosphorus-doped hydrogenated amorphous silicon. The films are in thermal equilibrium above the temperature T-E, which is lower for heavier doping. However, for a given sample, the T-E values are about the same for FQ and LS. Isothermal relaxation of conductivity a of the metastable states follows a stretched exponential, but the relaxation parameters for FQ and LS are different. We also find that the function Q = ln sigma - eS/k shows a large change after LS but hardly changes after FQ. The results are explained by assuming that the recombination of carriers at the local minima of the potential fluctuations present on a-Si:H(Li) gives rise to structural changes. The observed increase in the slope of Q versus 1/T after LS is interpreted as an increase in potential fluctuations. The very small change in Q observed after FQ is explained in terms of the higher mobility of hydrogen at the high temperature from which a-Si:H is quenched. [References: 43]
机译：我们报告了快速热淬火（FQ）和光浸泡（LS）对掺锂的氢化非晶硅（a-Si：H（Li））中电子传输的影响，并比较了同一样品中的两种不稳定性。我们发现，亚稳态变化在质量上与掺磷的氢化非晶硅相似。薄膜在高于温度T-E时处于热平衡状态，对于较重的掺杂温度较低。但是，对于给定的样本，FQ和LS的T-E值大致相同。亚稳态的电导率α的等温弛豫遵循拉伸指数，但FQ和LS的弛豫参数不同。我们还发现，函数Q = ln sigma-eS / k在LS之后显示出很大的变化，但在FQ之后几乎没有变化。通过假设载流子在a-Si：H（Li）上存在的电势波动的局部极小值处重新结合引起结构变化来解释结果。 LS之后观察到的Q与1 / T的斜率的增加被解释为电位波动的增加。 FQ之后观察到的Q的很小变化是根据氢在高温下的较高迁移率来解释的，a-Si：H被淬灭。 [参考：43]

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